The influence of process physics on the MOS device performance the case of the reverse short channel effect

Abstract

The goal of the present review is to show how material experiments using simple structures combined with process simulation can give sufficient insight to complex device phenomena that are critical for the deep submicron MOS device performance. Specifically we shall first present experimental and simulation results on the 2-D distribution of silicon interstitial both in Si and Silicon-On-Insulator. The conclusion drawn from these results will then drive our device experiments and simulations. We shall show that as predicted by the above experiments, NMOS SOI devices exhibit a reduction of the Reverse Short Channel effect (RSCE). Coupled process-device simulation reveals the influence of the fundamental point defect properties on MOS device performance.