Indirect aluminum incorporation for N/P/N junctions formation in silicon

Abstract

This paper presents a new method for Aluminum and Arsenic inclusion into silicon based on recoil implantation. Arsenic has been implanted through an Al layer and a silicon oxide layer. Experiments consisting in implantation+annealing have been carried out in order to obtain N/sup +//P/N/sup -//N/sup +/ structures. The feasibility of such structures is demonstrated and the problems linked to the process are identified for a further optimization of the technology.