{"title":"用于倍频应用的双势垒共振隧道二极管的一种新的大信号模型","authors":"D. Neculoiu, T. Tebeanu, I. Sztojanov","doi":"10.1109/SMICND.1997.651177","DOIUrl":null,"url":null,"abstract":"The paper presents a new double barrier resonant tunneling diode large-signal model, suitable for the design of microwave frequency multiplier circuits. The model is based on the device I-V characteristic and the model parameters can be easily extracted from measured data. The model is used to design a frequency multiplier circuit and to estimate its conversion efficiency. The results are in good agreement with those, obtained using an optimization program based on harmonic balance technique.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A new large-signal model for double barrier resonant tunneling diodes for frequency multiplier applications\",\"authors\":\"D. Neculoiu, T. Tebeanu, I. Sztojanov\",\"doi\":\"10.1109/SMICND.1997.651177\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents a new double barrier resonant tunneling diode large-signal model, suitable for the design of microwave frequency multiplier circuits. The model is based on the device I-V characteristic and the model parameters can be easily extracted from measured data. The model is used to design a frequency multiplier circuit and to estimate its conversion efficiency. The results are in good agreement with those, obtained using an optimization program based on harmonic balance technique.\",\"PeriodicalId\":144314,\"journal\":{\"name\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1997.651177\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1997.651177","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new large-signal model for double barrier resonant tunneling diodes for frequency multiplier applications
The paper presents a new double barrier resonant tunneling diode large-signal model, suitable for the design of microwave frequency multiplier circuits. The model is based on the device I-V characteristic and the model parameters can be easily extracted from measured data. The model is used to design a frequency multiplier circuit and to estimate its conversion efficiency. The results are in good agreement with those, obtained using an optimization program based on harmonic balance technique.
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