Semiconductor wafer bonding. A flexible approach to materials combinations in microelectronics; micromechanics and optoelectronics

U. Gosele, M. Alexe, P. Kopperschmidt, Q. Tong
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引用次数: 5

Abstract

The wafer bonding approach, originally developed mostly for the fabrication of silicon-on-insulator (SOI) substrates, has matured to a flexible technology giving access to materials combinations with applications far beyond the original area of SOI substrates. The paper will first review our present understanding of silicon-silicon wafer bonding and then proceed to bonding of dissimilar wafers and various thinning approaches including that associated with hydrogen implantation. Finally, low temperature wafer bonding approaches such as room temperature wafer bonding under ultra high vacuum conditions will be discussed.
半导体晶圆键合。微电子材料组合的柔性方法微力学和光电子学
晶圆键合方法最初主要是为制造绝缘体上硅(SOI)衬底而开发的,现在已经成熟为一种灵活的技术,使材料组合的应用远远超出了SOI衬底的原始领域。本文将首先回顾我们目前对硅-硅晶圆键合的理解,然后进行不同晶圆的键合和各种减薄方法,包括与氢注入相关的方法。最后,将讨论低温晶圆键合的方法,例如在超高真空条件下的室温晶圆键合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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