{"title":"a-Si/sub 3/N/sub 4/和a-SiO/sub x/N/sub y/的光学性质","authors":"M. Modreanu, N. Tomozeiu, P. Cosmin, M. Gartner","doi":"10.1109/SMICND.1997.651270","DOIUrl":null,"url":null,"abstract":"Some optical properties of a-SiN/sub x/ and a-SiO/sub x/N/sub y/ films deposited by LPCVD method are studied. Refractive index measured by ellipsometry method and IR absorption are studied as a function of some deposition parameters: temperature of deposition, gases flux ratio. The high value of deposition temperature means low values in refractive index. More oxygen into films decreases the refractive index. The refractive index dispersion is studied by single-oscillator model.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optical properties of a-Si/sub 3/N/sub 4/ and a-SiO/sub x/N/sub y/\",\"authors\":\"M. Modreanu, N. Tomozeiu, P. Cosmin, M. Gartner\",\"doi\":\"10.1109/SMICND.1997.651270\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Some optical properties of a-SiN/sub x/ and a-SiO/sub x/N/sub y/ films deposited by LPCVD method are studied. Refractive index measured by ellipsometry method and IR absorption are studied as a function of some deposition parameters: temperature of deposition, gases flux ratio. The high value of deposition temperature means low values in refractive index. More oxygen into films decreases the refractive index. The refractive index dispersion is studied by single-oscillator model.\",\"PeriodicalId\":144314,\"journal\":{\"name\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1997.651270\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1997.651270","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optical properties of a-Si/sub 3/N/sub 4/ and a-SiO/sub x/N/sub y/
Some optical properties of a-SiN/sub x/ and a-SiO/sub x/N/sub y/ films deposited by LPCVD method are studied. Refractive index measured by ellipsometry method and IR absorption are studied as a function of some deposition parameters: temperature of deposition, gases flux ratio. The high value of deposition temperature means low values in refractive index. More oxygen into films decreases the refractive index. The refractive index dispersion is studied by single-oscillator model.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
