An investigation on high dose ionic implanted silicon based on EPR and optical spectroscopy

Abstract

The investigation of phosphorus implanted Si structures at 100 keV for doses in the range of 10/sup 15/ cm/sup -2/ 10/sup 16/ cm/sup -2/ have been studied by EPR and UV-VIS reflectance spectroscopy. Phosphorus related defects are localised in the amorphous silicon environment (g=2.006). The annealing behaviour of both para and diamagnetic defects, has been analysed in the range of 50-550/spl deg/C. The activation energy of the paramagnetic centres in silicon has been determined surprisingly low 0.15 eV, but in accordance with other reported studies. We found that the average lifetime of the paramagnetic centres measured by EPR (4.4 min/400/spl deg/C) is much shorter than the time constant of the diamagnetic defects recovering process (112 min/450/spl deg/C) determined by optical reflectance method. A preliminary interpretation on the experimental data is proposed.