Electronic properties of the SiC-SiO/sub 2/ interface and related systems

Abstract

The properties of the SiC/SiO/sub 2/ interface defects and electron transport in silicon carbide inversion layers are discussed. Emphasis is put on the thermally-activated conductivity which prevails at room temperature. The transport properties are related to the conclusions that can be drawn from the electrical characterization of the SiC/SiO/sub 2/ interface and the oxide reliability is studied.