{"title":"SiC-SiO/sub /接口及相关系统的电子特性","authors":"Thierry Ouisse, E. Bano","doi":"10.1109/SMICND.1997.651559","DOIUrl":null,"url":null,"abstract":"The properties of the SiC/SiO/sub 2/ interface defects and electron transport in silicon carbide inversion layers are discussed. Emphasis is put on the thermally-activated conductivity which prevails at room temperature. The transport properties are related to the conclusions that can be drawn from the electrical characterization of the SiC/SiO/sub 2/ interface and the oxide reliability is studied.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"200 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Electronic properties of the SiC-SiO/sub 2/ interface and related systems\",\"authors\":\"Thierry Ouisse, E. Bano\",\"doi\":\"10.1109/SMICND.1997.651559\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The properties of the SiC/SiO/sub 2/ interface defects and electron transport in silicon carbide inversion layers are discussed. Emphasis is put on the thermally-activated conductivity which prevails at room temperature. The transport properties are related to the conclusions that can be drawn from the electrical characterization of the SiC/SiO/sub 2/ interface and the oxide reliability is studied.\",\"PeriodicalId\":144314,\"journal\":{\"name\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"volume\":\"200 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1997.651559\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1997.651559","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electronic properties of the SiC-SiO/sub 2/ interface and related systems
The properties of the SiC/SiO/sub 2/ interface defects and electron transport in silicon carbide inversion layers are discussed. Emphasis is put on the thermally-activated conductivity which prevails at room temperature. The transport properties are related to the conclusions that can be drawn from the electrical characterization of the SiC/SiO/sub 2/ interface and the oxide reliability is studied.
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