{"title":"伪晶Si/sub -x/ Ge/sub - 1-x晶体的相图","authors":"I.S. Chikichev, A. V. Vasev, S.I. Chikichev","doi":"10.1109/SMICND.1997.651245","DOIUrl":null,"url":null,"abstract":"The solid-liquid phase diagram is calculated for semiconductor binary solid solutions Si/sub x/Ge/sub 1-x/ coherently coupled with the lattice-mismatched substrates of various orientations. It is shown that elastic strain in pseudomorphic alloys results in dramatic reconfiguration of the familiar lens-type bulk phase diagram significantly shifting the melting points of pure Si or Ge crystals due to additional stress-induced energy.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Phase diagram for pseudomorphic Si/sub x/Ge/sub 1-x/ crystals\",\"authors\":\"I.S. Chikichev, A. V. Vasev, S.I. Chikichev\",\"doi\":\"10.1109/SMICND.1997.651245\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The solid-liquid phase diagram is calculated for semiconductor binary solid solutions Si/sub x/Ge/sub 1-x/ coherently coupled with the lattice-mismatched substrates of various orientations. It is shown that elastic strain in pseudomorphic alloys results in dramatic reconfiguration of the familiar lens-type bulk phase diagram significantly shifting the melting points of pure Si or Ge crystals due to additional stress-induced energy.\",\"PeriodicalId\":144314,\"journal\":{\"name\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1997.651245\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1997.651245","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Phase diagram for pseudomorphic Si/sub x/Ge/sub 1-x/ crystals
The solid-liquid phase diagram is calculated for semiconductor binary solid solutions Si/sub x/Ge/sub 1-x/ coherently coupled with the lattice-mismatched substrates of various orientations. It is shown that elastic strain in pseudomorphic alloys results in dramatic reconfiguration of the familiar lens-type bulk phase diagram significantly shifting the melting points of pure Si or Ge crystals due to additional stress-induced energy.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
