The temperature dependence of time-averaged hole drift mobility in As/sub 2/S/sub 3/ derived from PA measurements

A.M. Andriesh, I. Culeac, P. Ewen, A. Owen
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Abstract

The time-averaged hole drift mobility in As/sub 2/S/sub 3/ glass was studied in the range 77-330 K on the basis of temperature dependence of steady-state photoinduced absorption. The hole mobility was found to be thermally activated at high temperatures, of the order of 10/sup -10/ cm/sup 2//V sec at 300 K and almost temperature independent below /spl sim/130 K.
由PA测量得到As/sub 2/S/sub 3/中时间平均空穴漂移迁移率的温度依赖关系
基于稳态光诱导吸收的温度依赖性,研究了As/sub 2/S/sub 3/玻璃在77 ~ 330 K范围内的时间平均空穴漂移迁移率。在高温下,空穴迁移率被热激活,在300 K时为10/sup -10/ cm/sup 2//V秒,在130 K以下几乎与温度无关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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