Process using TiSi/sub 2/ as a shallow contact metallization

Abstract

Because of its low resistivity and excellent thermal stability, TiSi/sub 2/ is finding widespread application as interconnect material in BiCMOS and power devices. The Ti-Si reaction is complex and has been studied in certain regimes. For diminishing the stress a new method for deposition is tried. The thermal conditions were established and the morphology of TiSi/sub 2/ is explored with a X-ray powder diffractometer. TiSi/sub 2/ is formed on Si(100) and Si(111) substrates. The electric performances were determinate by a Van der Pauw structure.