A quantitative analysis of the penetration of SnO/sub 2/ into porous silicon

Abstract

The oxidation of monocrystalline silicon wafer (even at low temperatures /spl sim/500/spl deg/C) through the pores of SnO/sub 2/ sol-gel films deposited on it and the penetration of the Sn into the depth of porous silicon (PS) are quantitatively analyzed by Spectroscopic Ellipsometry (SE), Rutherford Back Scattering (RBS) and Infrared Spectroscopy (IR).