Influence of the restructuring process on the phosphorus doping near the polysilicon/SiO/sub 2/ interface on silicon

F. Găiseanu, D. Kurger, C. Dimitriadis, J. Stocmenos, C. Postolache, D. Tsoukalas, E. Tsoi, D. Goustouridis
{"title":"Influence of the restructuring process on the phosphorus doping near the polysilicon/SiO/sub 2/ interface on silicon","authors":"F. Găiseanu, D. Kurger, C. Dimitriadis, J. Stocmenos, C. Postolache, D. Tsoukalas, E. Tsoi, D. Goustouridis","doi":"10.1109/SMICND.1997.651551","DOIUrl":null,"url":null,"abstract":"We investigate the influence of structural modifications on the phosphorus doping of thin (0.4 /spl mu/m) LP-CVD polysilicon layers deposited at 620/spl deg/C on SiO/sub 2/ films intentionally grown with a thickness of 4 nm on a (111) oriented, silicon substrate. The measurements by XTEM and SIMS permitted to correlate the structure modifications with the doping properties after the various drive-in diffusion conditions in the temperature range of (900/spl deg/C-1000/spl deg/C) of the polysilicon layers.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1997.651551","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

We investigate the influence of structural modifications on the phosphorus doping of thin (0.4 /spl mu/m) LP-CVD polysilicon layers deposited at 620/spl deg/C on SiO/sub 2/ films intentionally grown with a thickness of 4 nm on a (111) oriented, silicon substrate. The measurements by XTEM and SIMS permitted to correlate the structure modifications with the doping properties after the various drive-in diffusion conditions in the temperature range of (900/spl deg/C-1000/spl deg/C) of the polysilicon layers.
重组过程对硅上多晶硅/SiO/ sub2 /界面附近磷掺杂的影响
我们研究了结构修饰对在(111)取向硅衬底上有意生长厚度为4nm的SiO/sub 2/薄膜上以620/spl℃沉积的薄(0.4 /spl mu/m) LP-CVD多晶硅层(0.4 /spl mu/m)磷掺杂的影响。通过XTEM和SIMS的测量,可以将多晶硅层在900/spl度/C-1000/spl度/C的不同驱动扩散条件下的结构变化与掺杂性能联系起来。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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