Impurity states in a spherical quantum dot: Effect of central cell correction

Abstract

The effect of the central cell correction on the binding energies of shallow donors in a spherical GaAs/Ga/sub 1-x/Al/sub x/As quantum dot is studied. The effective-mass approximation within a variational scheme is adopted and central cell corrections are calculated by using a Coulomb potential modified with an adjustable parameter. For small values of the radius of the dot large corrections are obtained for the shallow donors studied.