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1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings最新文献

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Proton irradiation induced defects in oxygenated Si p-n junctions 质子辐照诱导氧合Si - p-n结缺陷
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651027
T. Boţilă, I. Pintilie, D. Petre, L. Pintilie
{"title":"Proton irradiation induced defects in oxygenated Si p-n junctions","authors":"T. Boţilă, I. Pintilie, D. Petre, L. Pintilie","doi":"10.1109/SMICND.1997.651027","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651027","url":null,"abstract":"The proton irradiation induced defects in oxygenated Si p-n junctions have been investigated using both optical charging spectroscopy (OCS) and thermally stimulated currents (TSC) methods in the temperature range 25-250 K. The measurements were performed for 3 fluences of proton irradiation: 1.07/spl times/10/sup 12/ cm/sup -2/, 1.084/spl times/10/sup 13/ cm/sup -2/ and 1.19/spl times/10/sup 14/ cm/sup -2/.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114999660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On the average-gap model in amorphous materials 非晶材料的平均间隙模型
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651582
N. Tomozeiu
{"title":"On the average-gap model in amorphous materials","authors":"N. Tomozeiu","doi":"10.1109/SMICND.1997.651582","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651582","url":null,"abstract":"The dispersion of the subband refractive index in amorphous semiconductors is well described by \"average gap\" model which is based on two-band model of optical transitions. The disorder potentials due to the \"electrostatic\" and \"elastic\" forces determine the variation of the conduction-and valence-band edges. The average gap is defined as the difference between the most probable values of the bottom of the conduction band and the top of the valence band. The model is applied on a-Si/sub 1-x/C/sub x/:H, a-C:H and a-SiO/sub x/N/sub y/ layers.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129601695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Early resistance change and stress/electromigration evolution in near-bamboo interconnects 近竹互连的早期电阻变化和应力/电迁移演化
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651013
V. Petrescu, A. Mouthaan, G. Dima, B. Govoreanu, O. Mitrea, M. Profirescu
{"title":"Early resistance change and stress/electromigration evolution in near-bamboo interconnects","authors":"V. Petrescu, A. Mouthaan, G. Dima, B. Govoreanu, O. Mitrea, M. Profirescu","doi":"10.1109/SMICND.1997.651013","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651013","url":null,"abstract":"A complete description for early resistance change and mechanical stress evolution in near-bamboo interconnects, related to the electromigration, is given in this paper. The proposed model, for the first time, combines the stress/vacancy concentration evolution with the early resistance change of the Al line with a near-bamboo microstructure, which has been proven to be a fast technique for prediction of the MTF of a line compared to the conventional (accelerated) stress.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130103253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A simple model of mobility transverse field dependence in MOS transistors: application to current unified analytical expressions MOS晶体管迁移率横向场依赖的一个简单模型:在电流统一解析表达式中的应用
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651561
A. Rusu, A. Ionescu, A. Chovet, D. Steriu
{"title":"A simple model of mobility transverse field dependence in MOS transistors: application to current unified analytical expressions","authors":"A. Rusu, A. Ionescu, A. Chovet, D. Steriu","doi":"10.1109/SMICND.1997.651561","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651561","url":null,"abstract":"A new and simple model for the transverse field dependence of the channel carrier mobility is proposed and validated in bulk silicon n-MOSFETs. It is shown that the extraction of the associated parameters is fast and accurate, and the unified global current model presents good aptitudes for optimal parameter extraction.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124991899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Physical modelling of Shockley diodes used on 2/10 /spl mu/sec surge circuits 用于2/10 /spl mu/sec浪涌电路的肖克利二极管的物理建模
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651560
G. Charitat, J. Dilhac, P. Leturcq, E. Bernier, R. Pezzani
{"title":"Physical modelling of Shockley diodes used on 2/10 /spl mu/sec surge circuits","authors":"G. Charitat, J. Dilhac, P. Leturcq, E. Bernier, R. Pezzani","doi":"10.1109/SMICND.1997.651560","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651560","url":null,"abstract":"This paper presents results about the electrical behaviour of Shockley diodes. Static as well as dynamic modelling are compared to experimental results. Triggering mechanisms are either avalanche generated currents, for static analysis, or surge signals, for dynamic one. The operation of this device is experimentally studied on lightning surge signal complying to the FCC part 68 standard. Transient characteristics are discussed from the physical, modelling and experimental points of view.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"20 Suppl 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123590480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Processing technologies for SiC SiC的加工技术
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651571
G. Constantinidis
{"title":"Processing technologies for SiC","authors":"G. Constantinidis","doi":"10.1109/SMICND.1997.651571","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651571","url":null,"abstract":"Processing steps such as polishing, thermal oxidation, ion implantation, ohmic contacts, Schottky contacts and patterning are key issues for the successful fabrication of SiC-power devices and high temperature devices. This paper reviews contact fabrication and patterning with the emphasis on reactive ion etching.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124226227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Influence of pn junction surface region upon the peak pulse power of silicon transient voltage suppressors pn结表面积对硅瞬态电压抑制器脉冲峰值功率的影响
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651041
V. Obreja
{"title":"Influence of pn junction surface region upon the peak pulse power of silicon transient voltage suppressors","authors":"V. Obreja","doi":"10.1109/SMICND.1997.651041","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651041","url":null,"abstract":"It is shown that over 200-250 V nominal breakdown voltage, a premature junction surface breakdown at a voltage which is at least 50 V less than the bulk breakdown voltage value may appear. Such a suppressor is not able to withstand the expected value of the peak pulse power. If no premature breakdown occurs, the peak pulse power may be still affected by the surface component of the leakage current at high junction temperature. At nominal breakdown voltage lower than 200 V, less influence of the junction surface is exhibited on the suppressor power capability.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134620489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Structure and hardness modifications induced by UV light in Ge-As-S amorphous chalcogenide films 紫外光诱导Ge-As-S非晶硫系薄膜的结构和硬度变化
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651251
M. Popescu, E. Skordeva, D. Arsova, E. Vateva, F. Sava, A. Lőrinczi
{"title":"Structure and hardness modifications induced by UV light in Ge-As-S amorphous chalcogenide films","authors":"M. Popescu, E. Skordeva, D. Arsova, E. Vateva, F. Sava, A. Lőrinczi","doi":"10.1109/SMICND.1997.651251","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651251","url":null,"abstract":"X-ray diffraction and transmission experiments as well as hardness measurements on virgin and ultra violet (UV)-irradiated amorphous films in the system Ge/sub x/As/sub 40-x/S/sub 60/ have been performed. The UV-light determines the film softening for x<19 and film hardening for x>19. The structure remains amorphous but the distance characteristic to medium range order (MRO) shows variations as a function of composition and irradiation time. The main effect of the UV light is the release of a significant amount of sulphur.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131767779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new analytical method for modeling selective epitaxial growth 一种新的模拟选择性外延生长的分析方法
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651597
A. Mircea, A. Manolescu, A. Manolescu
{"title":"A new analytical method for modeling selective epitaxial growth","authors":"A. Mircea, A. Manolescu, A. Manolescu","doi":"10.1109/SMICND.1997.651597","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651597","url":null,"abstract":"The possibility of finding an approximate solution for the Laplace equation in two dimensions with special boundary conditions is explained. These conditions correspond to the description of a Reduced Surface Interaction Model (RSIM), appropriate for describing the problem of selective area epitaxy. Very good agreement with computed results using the standard finite difference technique for practical growing conditions of InP and GaAs was obtained. However a significant reduction of computing time (from hours to minutes) is observed.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133232360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A photoconduction study on porous silicon 多孔硅的光传导研究
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651578
A. Dafinei, G. Crăciun, C. Flueraru, C. Sargentis, E. Niculescu
{"title":"A photoconduction study on porous silicon","authors":"A. Dafinei, G. Crăciun, C. Flueraru, C. Sargentis, E. Niculescu","doi":"10.1109/SMICND.1997.651578","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651578","url":null,"abstract":"The porosification of crystalline silicon by electrochemical methods led to the obtaining of a new material with substantial changes in photoelectronic properties. The photoconductive behaviour of porous silicon is characterised by an extremely high dark resistivity, a photosensitivity for visible light, and an intrinsic bias voltage dependence of the spectral response. These properties are interpreted as a result of band-gap widening in PS and are correlated with surface morphology investigated by Atomic Force Microscopy (AFM).","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122124091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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