A new analytical method for modeling selective epitaxial growth

Abstract

The possibility of finding an approximate solution for the Laplace equation in two dimensions with special boundary conditions is explained. These conditions correspond to the description of a Reduced Surface Interaction Model (RSIM), appropriate for describing the problem of selective area epitaxy. Very good agreement with computed results using the standard finite difference technique for practical growing conditions of InP and GaAs was obtained. However a significant reduction of computing time (from hours to minutes) is observed.