{"title":"一种新的模拟选择性外延生长的分析方法","authors":"A. Mircea, A. Manolescu, A. Manolescu","doi":"10.1109/SMICND.1997.651597","DOIUrl":null,"url":null,"abstract":"The possibility of finding an approximate solution for the Laplace equation in two dimensions with special boundary conditions is explained. These conditions correspond to the description of a Reduced Surface Interaction Model (RSIM), appropriate for describing the problem of selective area epitaxy. Very good agreement with computed results using the standard finite difference technique for practical growing conditions of InP and GaAs was obtained. However a significant reduction of computing time (from hours to minutes) is observed.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new analytical method for modeling selective epitaxial growth\",\"authors\":\"A. Mircea, A. Manolescu, A. Manolescu\",\"doi\":\"10.1109/SMICND.1997.651597\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The possibility of finding an approximate solution for the Laplace equation in two dimensions with special boundary conditions is explained. These conditions correspond to the description of a Reduced Surface Interaction Model (RSIM), appropriate for describing the problem of selective area epitaxy. Very good agreement with computed results using the standard finite difference technique for practical growing conditions of InP and GaAs was obtained. However a significant reduction of computing time (from hours to minutes) is observed.\",\"PeriodicalId\":144314,\"journal\":{\"name\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1997.651597\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1997.651597","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new analytical method for modeling selective epitaxial growth
The possibility of finding an approximate solution for the Laplace equation in two dimensions with special boundary conditions is explained. These conditions correspond to the description of a Reduced Surface Interaction Model (RSIM), appropriate for describing the problem of selective area epitaxy. Very good agreement with computed results using the standard finite difference technique for practical growing conditions of InP and GaAs was obtained. However a significant reduction of computing time (from hours to minutes) is observed.
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