A. Dafinei, G. Crăciun, C. Flueraru, C. Sargentis, E. Niculescu
{"title":"多孔硅的光传导研究","authors":"A. Dafinei, G. Crăciun, C. Flueraru, C. Sargentis, E. Niculescu","doi":"10.1109/SMICND.1997.651578","DOIUrl":null,"url":null,"abstract":"The porosification of crystalline silicon by electrochemical methods led to the obtaining of a new material with substantial changes in photoelectronic properties. The photoconductive behaviour of porous silicon is characterised by an extremely high dark resistivity, a photosensitivity for visible light, and an intrinsic bias voltage dependence of the spectral response. These properties are interpreted as a result of band-gap widening in PS and are correlated with surface morphology investigated by Atomic Force Microscopy (AFM).","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A photoconduction study on porous silicon\",\"authors\":\"A. Dafinei, G. Crăciun, C. Flueraru, C. Sargentis, E. Niculescu\",\"doi\":\"10.1109/SMICND.1997.651578\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The porosification of crystalline silicon by electrochemical methods led to the obtaining of a new material with substantial changes in photoelectronic properties. The photoconductive behaviour of porous silicon is characterised by an extremely high dark resistivity, a photosensitivity for visible light, and an intrinsic bias voltage dependence of the spectral response. These properties are interpreted as a result of band-gap widening in PS and are correlated with surface morphology investigated by Atomic Force Microscopy (AFM).\",\"PeriodicalId\":144314,\"journal\":{\"name\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1997.651578\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1997.651578","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The porosification of crystalline silicon by electrochemical methods led to the obtaining of a new material with substantial changes in photoelectronic properties. The photoconductive behaviour of porous silicon is characterised by an extremely high dark resistivity, a photosensitivity for visible light, and an intrinsic bias voltage dependence of the spectral response. These properties are interpreted as a result of band-gap widening in PS and are correlated with surface morphology investigated by Atomic Force Microscopy (AFM).
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