{"title":"pn结表面积对硅瞬态电压抑制器脉冲峰值功率的影响","authors":"V. Obreja","doi":"10.1109/SMICND.1997.651041","DOIUrl":null,"url":null,"abstract":"It is shown that over 200-250 V nominal breakdown voltage, a premature junction surface breakdown at a voltage which is at least 50 V less than the bulk breakdown voltage value may appear. Such a suppressor is not able to withstand the expected value of the peak pulse power. If no premature breakdown occurs, the peak pulse power may be still affected by the surface component of the leakage current at high junction temperature. At nominal breakdown voltage lower than 200 V, less influence of the junction surface is exhibited on the suppressor power capability.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Influence of pn junction surface region upon the peak pulse power of silicon transient voltage suppressors\",\"authors\":\"V. Obreja\",\"doi\":\"10.1109/SMICND.1997.651041\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is shown that over 200-250 V nominal breakdown voltage, a premature junction surface breakdown at a voltage which is at least 50 V less than the bulk breakdown voltage value may appear. Such a suppressor is not able to withstand the expected value of the peak pulse power. If no premature breakdown occurs, the peak pulse power may be still affected by the surface component of the leakage current at high junction temperature. At nominal breakdown voltage lower than 200 V, less influence of the junction surface is exhibited on the suppressor power capability.\",\"PeriodicalId\":144314,\"journal\":{\"name\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1997.651041\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1997.651041","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of pn junction surface region upon the peak pulse power of silicon transient voltage suppressors
It is shown that over 200-250 V nominal breakdown voltage, a premature junction surface breakdown at a voltage which is at least 50 V less than the bulk breakdown voltage value may appear. Such a suppressor is not able to withstand the expected value of the peak pulse power. If no premature breakdown occurs, the peak pulse power may be still affected by the surface component of the leakage current at high junction temperature. At nominal breakdown voltage lower than 200 V, less influence of the junction surface is exhibited on the suppressor power capability.
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