MOS晶体管迁移率横向场依赖的一个简单模型:在电流统一解析表达式中的应用

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI:10.1109/SMICND.1997.651561

A. Rusu, A. Ionescu, A. Chovet, D. Steriu

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引用次数: 1

摘要

提出了一种新的、简单的沟道载流子迁移率横向场依赖性模型，并在体硅n- mosfet中进行了验证。实验结果表明，相关参数的提取速度快、精度高，统一的全局电流模型对最优参数的提取具有较好的适用性。

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A simple model of mobility transverse field dependence in MOS transistors: application to current unified analytical expressions

A new and simple model for the transverse field dependence of the channel carrier mobility is proposed and validated in bulk silicon n-MOSFETs. It is shown that the extraction of the associated parameters is fast and accurate, and the unified global current model presents good aptitudes for optimal parameter extraction.

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1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings

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