Proton irradiation induced defects in oxygenated Si p-n junctions

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI:10.1109/SMICND.1997.651027

T. Boţilă, I. Pintilie, D. Petre, L. Pintilie

引用次数: 0

Abstract

The proton irradiation induced defects in oxygenated Si p-n junctions have been investigated using both optical charging spectroscopy (OCS) and thermally stimulated currents (TSC) methods in the temperature range 25-250 K. The measurements were performed for 3 fluences of proton irradiation: 1.07/spl times/10/sup 12/ cm/sup -2/, 1.084/spl times/10/sup 13/ cm/sup -2/ and 1.19/spl times/10/sup 14/ cm/sup -2/.

查看原文本刊更多论文

质子辐照诱导氧合Si - p-n结缺陷

利用光学充电光谱(OCS)和热刺激电流(TSC)方法，在25 ~ 250 K的温度范围内研究了氧合Si p-n结中质子辐照引起的缺陷。对质子辐照的3个影响进行了测量:1.07/spl次/10/sup 12/ cm/sup -2/、1.084/spl次/10/sup 13/ cm/sup -2/和1.19/spl次/10/sup 14/ cm/sup -2/。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings

自引率

0.00%

发文量