Structure and hardness modifications induced by UV light in Ge-As-S amorphous chalcogenide films

M. Popescu, E. Skordeva, D. Arsova, E. Vateva, F. Sava, A. Lőrinczi
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Abstract

X-ray diffraction and transmission experiments as well as hardness measurements on virgin and ultra violet (UV)-irradiated amorphous films in the system Ge/sub x/As/sub 40-x/S/sub 60/ have been performed. The UV-light determines the film softening for x<19 and film hardening for x>19. The structure remains amorphous but the distance characteristic to medium range order (MRO) shows variations as a function of composition and irradiation time. The main effect of the UV light is the release of a significant amount of sulphur.
紫外光诱导Ge-As-S非晶硫系薄膜的结构和硬度变化
对Ge/sub x/ as /sub 40-x/S/sub 60/体系中未加工和紫外辐照的非晶态薄膜进行了x射线衍射和透射实验以及硬度测量。紫外光决定胶片的软化为x19。结构保持无定形,但中程序的距离特征(MRO)随成分和辐照时间的变化而变化。紫外线的主要作用是释放出大量的硫。
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