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1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings最新文献

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Exciton-phonon spectra in CuIn/sub 1-x/Ga/sub x/S/sub 2/ crystals CuIn/sub - 1-x/Ga/sub -x/ S/sub - 2晶体中的激子-声子谱
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651242
S. Radautsan, N. Syrbu, R. Creţu, V. Tezlevan
{"title":"Exciton-phonon spectra in CuIn/sub 1-x/Ga/sub x/S/sub 2/ crystals","authors":"S. Radautsan, N. Syrbu, R. Creţu, V. Tezlevan","doi":"10.1109/SMICND.1997.651242","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651242","url":null,"abstract":"In this work, the wavelength derivative reflection (WDR) spectra of CuIn/sub 1-x/Ga/sub x/S/sub 2/ crystals have been investigated in the region of A, B and C series. The n=1, n=2 and n=3 states are determined and contours of exciton lines (n=1) are calculated. The parameters of excitons and bands have been determined for the region of band gap minimum.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114632902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A class of the MOSFET-bipolar nonlinear negative resistance oscillator 一类mosfet双极非线性负阻振荡器
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651337
D. Vizireanu, R. Serban
{"title":"A class of the MOSFET-bipolar nonlinear negative resistance oscillator","authors":"D. Vizireanu, R. Serban","doi":"10.1109/SMICND.1997.651337","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651337","url":null,"abstract":"In this paper a class of MOSFET-bipolar nonlinear negative resistance is proposed. A mathematical model for the voltage-current equation is shown. We investigate the mathematical properties of the associated nonlinear differential equation for a single-mode LCR network oscillator. In particular, we prove that under suitable conditions, small-amplitude stable limit-cycle oscillations can occur. An analytic approximation is obtained far the periodic solution. This prediction is compared with the results obtained by numerical integration.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126832897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dielectric and semiconductor membranes as support for microwave circuits 作为微波电路支撑的介质和半导体膜
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651315
A. Muller, I. Petrini, V. Avramescu, R. Muller, D. Vasilache, P. Cosmin, I. Cernica, R. Marcelli, V. Fogllieti
{"title":"Dielectric and semiconductor membranes as support for microwave circuits","authors":"A. Muller, I. Petrini, V. Avramescu, R. Muller, D. Vasilache, P. Cosmin, I. Cernica, R. Marcelli, V. Fogllieti","doi":"10.1109/SMICND.1997.651315","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651315","url":null,"abstract":"A 1.5 /spl mu/m thin SiO/sub 2//Si/sub 3/N/sub 4//SiO/sub 2/ membrane was manufactured on <100> Silicon substrate. Also a 10-20 /spl mu/m thin GaAs membrane was manufactured using a new etching solution. Both types of membranes are destined to be used as support for microwave circuits; this has as effect a major improvement of circuits' performances.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129295300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Hydrogen implantation in polycrystalline ZnO thin films 多晶ZnO薄膜中的氢注入
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651546
V. Bogatu, A. Goldenblum, B. Logonfatu
{"title":"Hydrogen implantation in polycrystalline ZnO thin films","authors":"V. Bogatu, A. Goldenblum, B. Logonfatu","doi":"10.1109/SMICND.1997.651546","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651546","url":null,"abstract":"The paper presents the first results obtained on the hydrogen ion implantation in polycrystalline ZnO thin films. The ion implantation was carried out with a Kaufman type ion source. The results obtained after the experimental determination of the penetration depth are very close to the ones computed on the basis of the usual theory for monocrystals.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123233548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A proposed methodology and integrated circuit for producing signals with 1/f or Lorentzian or white fluctuation noise 提出了一种产生1/f洛伦兹或白波动噪声信号的方法和集成电路
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651556
S. Bara, A. Negoi, J. Zimmermann
{"title":"A proposed methodology and integrated circuit for producing signals with 1/f or Lorentzian or white fluctuation noise","authors":"S. Bara, A. Negoi, J. Zimmermann","doi":"10.1109/SMICND.1997.651556","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651556","url":null,"abstract":"This paper presents a method to obtain signals with constant (white noise) or Lorentzian type (GR) or 1/f type power spectral density (PSD). The major advantage resides on using the same principle to generate the three types of signals and consequently on using a single circuit. This method can be used to simulate the noise sources inside a device.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123762418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical behavior of 6H-SiC pn diodes 6H-SiC pn二极管的电学行为
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651599
M. Badila, G. Brezeanu, B. Tudor, G. Bica, P. Lungu, J. Millán, P. Godignon, M. Locatelli, J. Chante
{"title":"Electrical behavior of 6H-SiC pn diodes","authors":"M. Badila, G. Brezeanu, B. Tudor, G. Bica, P. Lungu, J. Millán, P. Godignon, M. Locatelli, J. Chante","doi":"10.1109/SMICND.1997.651599","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651599","url":null,"abstract":"The electrical I-V, C-V characteristics of 6H-SiC epitaxial pn diodes are measured and analyzed. The devices are fabricated in a simple technology, using a single epilayer. The measured breakdown voltage of about 200 V is in good agreement with the calculated value. The saturation currents, I/sub od/=3.67/spl times/10/sup -51/ A, I/sub cr/=5.6/spl times/10/sup -24/ A, and the equivalent ionized impurities concentration, N/sub aq/=1.4/spl times/10/sup 17/ cm/sup -3/, are obtained by optimal extraction.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124876496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chemical etching control during the self-limitation process by boron diffusion in silicon: Analytical results 硼在硅中扩散自限过程中的化学蚀刻控制:分析结果
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651590
F. Găiseanu, D. Tsoukalas, J. Esteve, C. Postolache, D. Goustouridis, E. Tsoi
{"title":"Chemical etching control during the self-limitation process by boron diffusion in silicon: Analytical results","authors":"F. Găiseanu, D. Tsoukalas, J. Esteve, C. Postolache, D. Goustouridis, E. Tsoi","doi":"10.1109/SMICND.1997.651590","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651590","url":null,"abstract":"The authors present an analytical model including the influence of the highly-doped silicon layer and of the intrinsic boron diffusion region on the chemical etching rate and on the chemical etching time, allowing one to control the self-limitation chemical etching process to obtain silicon micromechanical elements.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"171 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121243102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Bipolar preamplifier for monolithic OEIC receiver 用于单片OEIC接收机的双极前置放大器
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651325
C. Stănescu, S. Porumbescu, A. Hanganu, S. Costea, I. Mirea, G. Aungurencei, M. Furis, B. Mihalea
{"title":"Bipolar preamplifier for monolithic OEIC receiver","authors":"C. Stănescu, S. Porumbescu, A. Hanganu, S. Costea, I. Mirea, G. Aungurencei, M. Furis, B. Mihalea","doi":"10.1109/SMICND.1997.651325","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651325","url":null,"abstract":"The paper presents a bipolar preamplifier, built using only NPN transistors, designed to be used in an OEIC for a compact disk system. The preamplifier provides a high transimpedance gain, a wide bandwidth and a low output offset voltage over the entire temperature range.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"13 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115839665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrical properties of the ITO/CuPc/(CuPc+TPyP)TpyP/Al cells ITO/CuPc/(CuPc+TPyP) TPyP /Al电池的电学特性
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651291
Ș. Antohe, A. Merticaru
{"title":"Electrical properties of the ITO/CuPc/(CuPc+TPyP)TpyP/Al cells","authors":"Ș. Antohe, A. Merticaru","doi":"10.1109/SMICND.1997.651291","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651291","url":null,"abstract":"Three-layered organic solar cells with an interlayer of codeposited dyes of p-type Copper Phthalocyanine (CuPc) and n-type 5,10,15,20-Tetra (4-Pyridil)21H,23H-Porphine (TPyP) between the respective dye layers were prepared and characterized. The analysis of their dark current-voltage (I-V) characteristics at room temperature has been presented in order to elucidate the conduction mechanisms and to evaluate the cell parameters.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116686024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Experiments on B/sup +/ implantation for isolation processes in GaAs MMICs manufactured on MESFET wafers MESFET晶圆上GaAs mmic隔离工艺的B/sup +/注入实验
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651593
M. Simion, S. Simion, V. Avramescu, A. Coraci
{"title":"Experiments on B/sup +/ implantation for isolation processes in GaAs MMICs manufactured on MESFET wafers","authors":"M. Simion, S. Simion, V. Avramescu, A. Coraci","doi":"10.1109/SMICND.1997.651593","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651593","url":null,"abstract":"In this paper are presented experimental results concerning the dependence of the isolation resistance versus the implant doses and the implant energy, for boron implanted ions into the GaAs MESFET epitaxial wafers. It is shown that the dose level is not critical; very good isolation for MMICs may be obtained for ions dose of 6 10/sup 11/-1 10/sup 12/ ions/cm/sup 2/. Also, it is experimentally shown that the isolation characteristics are stable up to at least 200/spl deg/C, but at 450/spl deg/C the isolation resistance is small due to the annealing process which decreases the lattice disorder. So, the ohmic contacts based on the AuGe-Ni system (450/spl deg/C allowing temperature) must be realised before the boron isolation.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"243 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116143025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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