M. Badila, G. Brezeanu, B. Tudor, G. Bica, P. Lungu, J. Millán, P. Godignon, M. Locatelli, J. Chante
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The electrical I-V, C-V characteristics of 6H-SiC epitaxial pn diodes are measured and analyzed. The devices are fabricated in a simple technology, using a single epilayer. The measured breakdown voltage of about 200 V is in good agreement with the calculated value. The saturation currents, I/sub od/=3.67/spl times/10/sup -51/ A, I/sub cr/=5.6/spl times/10/sup -24/ A, and the equivalent ionized impurities concentration, N/sub aq/=1.4/spl times/10/sup 17/ cm/sup -3/, are obtained by optimal extraction.
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