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1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings最新文献

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Two simple extensions to the Gummel-Poon model Gummel-Poon模型的两个简单扩展
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651564
B. Tudor, Mihai-Dan Steriu
{"title":"Two simple extensions to the Gummel-Poon model","authors":"B. Tudor, Mihai-Dan Steriu","doi":"10.1109/SMICND.1997.651564","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651564","url":null,"abstract":"In this paper two extensions to the widely used Gummel-Poon model for bipolar junction transistors are proposed. Good modeling results are illustrated in the case of polysilicon emitter BJTs.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126946839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Status and trends of microprocessor design 微处理器设计的现状与趋势
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651339
Titu-Marius I. Băjenescu
{"title":"Status and trends of microprocessor design","authors":"Titu-Marius I. Băjenescu","doi":"10.1109/SMICND.1997.651339","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651339","url":null,"abstract":"The paper presents the perspective and some important issues for the future microprocessor design.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128011384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
PNP bipolar structure design for low voltage 0.6 /spl mu/m complementary BiCMOS technology PNP双极结构设计为低电压0.6 /spl mu/m互补BiCMOS技术
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651557
M. Belaroussi, B. Djezzar, S. Mekhaldi
{"title":"PNP bipolar structure design for low voltage 0.6 /spl mu/m complementary BiCMOS technology","authors":"M. Belaroussi, B. Djezzar, S. Mekhaldi","doi":"10.1109/SMICND.1997.651557","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651557","url":null,"abstract":"This paper describes simulation results of a vertical pnp bipolar structure design suitable for low voltage application which can be fabricated in BiCMOS technology. This study is carried out using a mixed two dimensional numerical device/circuit simulation program called CODECS. The simulations show that adding a medium performance pnp transistor, the performance of the complementary BiCMOS over conventional BiCMOS and CMOS were greatly improved as the supply voltage is lowered and the design rules is scaled down to 0.6 /spl mu/m.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134030659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Limiting roughness in anisotropic etching 各向异性蚀刻中的限制粗糙度
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651316
R. Divan, H. Camon, N. Moldovan, M. Dilhan
{"title":"Limiting roughness in anisotropic etching","authors":"R. Divan, H. Camon, N. Moldovan, M. Dilhan","doi":"10.1109/SMICND.1997.651316","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651316","url":null,"abstract":"An experimental study is made to establish if the roughness of the etched surface attains a saturation value during the KOH etching of silicon, as predicted by the atomic scale simulators. We showed there is a stable saturation roughness specific to the orientation of the wafer, but much greater than the values predicted by the simulators. The same saturation roughness is reached independent on the initial roughness of the surface. Surfactants dissolved in small concentrations in the etchant were shown to reduce drastically the saturation value of the roughness and rise the etching rates, without affecting noticeable the anisotropy diagrams.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"8 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113975021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Lattice misfit and elastic strain distribution in heteroepitaxial InP/InGaAs structure 异质外延InP/InGaAs结构的晶格失配与弹性应变分布
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651262
A. Stoica, N. Popa, M. Stoica, D. Sachelarie, M. Sachelarie, E. Rusu
{"title":"Lattice misfit and elastic strain distribution in heteroepitaxial InP/InGaAs structure","authors":"A. Stoica, N. Popa, M. Stoica, D. Sachelarie, M. Sachelarie, E. Rusu","doi":"10.1109/SMICND.1997.651262","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651262","url":null,"abstract":"We obtained a multilayer heteroepitaxial structure of In/sub 0.53/Ga/sub 0.47/As-type deposed on (100) oriented InP substrate. We selected deliberately different thickness and doping concentrations of each layer for their potential applications in very high frequency bipolar transistors. A sequence of six epilayers were realized by vapour phase epitaxy. The characterization of crystallographic and semiconducting properties in correlation with technological processes is performed by TSC-method and by double crystal X-ray diffraction. We propose a kinematics model of X-ray diffraction in heteroepitaxial muitilayer structures of InP/InGaAs. It is based on a discontinuous lattice misfit and elastic strain distribution. The model fits well the rocking curves obtained for both (004) and (224) reflecting planes. The values of the lattice misfit and the elastic strains in the plane of lamellae were calculated.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122437059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Properties of ferromagnetic thin films and ferromagnetic multilayers of Ni-Fe/SiO/sub 2/ Ni-Fe/SiO/sub / 2/铁磁薄膜及铁磁多层膜的性能
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651596
J. Neamtu, A. Coraci, O. Buiu
{"title":"Properties of ferromagnetic thin films and ferromagnetic multilayers of Ni-Fe/SiO/sub 2/","authors":"J. Neamtu, A. Coraci, O. Buiu","doi":"10.1109/SMICND.1997.651596","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651596","url":null,"abstract":"The properties of Fe, Ni, and permalloy monolayer and alternating Ni-Fe/SiO/sub 2/ multilayer thin films prepared by high vacuum evaporation and DC sputtering have been investigated. In the case of multilayer thin films the relative permeability at high frequencies is much improved, confirming the existence of a magnetostatic coupling between the 0.2 /spl mu/m thin magnetic layers. The alternating Ni-Fe/SiO/sub 2/ multilayer thin films are available for utilization as magnetoresistive heads and magnetoresistive sensors.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"239 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121164968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Zinc diffusion from a reactively sputtered glass source in GaAs 反应溅射玻璃源在砷化镓中的锌扩散
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651598
D. Jishiashvili, Z. Shiolashvili, R. Dzanelidze, L. Mosidze
{"title":"Zinc diffusion from a reactively sputtered glass source in GaAs","authors":"D. Jishiashvili, Z. Shiolashvili, R. Dzanelidze, L. Mosidze","doi":"10.1109/SMICND.1997.651598","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651598","url":null,"abstract":"A low temperature reactive ion-plasma sputtering technique is used to obtain a zinc diffusion source in the form of zinc silicate glass (ZSG). Diffusion parameters of Zn in GaAs are evaluated in the temperature range of 470-700/spl deg/C. The developed original technology simplifies the diffusion process, allows to the perform doping procedure in open tubes and inert atmospheres without encapsulation. The surface concentration can be regulated in the wide range from 10/sup 16/ to 10/sup 20/ cm/sup -3/.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126086092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bi-thread microcontroller as digital signal processor 双线程微控制器作为数字信号处理器
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651329
D. Stefan, G. Stefan
{"title":"Bi-thread microcontroller as digital signal processor","authors":"D. Stefan, G. Stefan","doi":"10.1109/SMICND.1997.651329","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651329","url":null,"abstract":"A bi-thread pipeline RISC microcontroller working together with a simple but efficient arithmetic coprocessor is proposed as digital signal processor. The structure has a Dual Architecture in which the main thread is used to manage the interfacing process and to run the algorithm and the slave thread is used only to control the \"hard\" computation in the arithmetic coprocessor that performs the sum of products. For coprocessor we have a sequential machine with a good mean working time. The paper presents the machine architecture and the associated organisation.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116908602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
GTO gating circuit by open cathode method 开阴极法GTO门控电路
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651562
F. Mitu, F. Draghici, G. Dillmot, G. Brezeanu, I. Enache
{"title":"GTO gating circuit by open cathode method","authors":"F. Mitu, F. Draghici, G. Dillmot, G. Brezeanu, I. Enache","doi":"10.1109/SMICND.1997.651562","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651562","url":null,"abstract":"A GTO turn-off circuit by open cathode technique is presented. This circuit provides the high turn-off speed, low losses and the improving of dV/dt capability for GTO thyristors.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124102345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance of InAs photoelectromagnetic infrared detectors at room temperature 室温下InAs光电磁红外探测器的性能
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651265
M. Logofatu, B. Logofatu, C. Grigorescu, I. Munteanu
{"title":"Performance of InAs photoelectromagnetic infrared detectors at room temperature","authors":"M. Logofatu, B. Logofatu, C. Grigorescu, I. Munteanu","doi":"10.1109/SMICND.1997.651265","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651265","url":null,"abstract":"The spectral distribution of the open-circuit voltage and the spectral responsivity over the range (1.0-5.0 /spl mu/m) for InAs photoelectromagnetic (PEM) near-infrared (NIR) detector at 300 K are presented. The correlation between material parameters, geometrical dimensions and the detector performance is discussed. The surface recombination velocity (10/sup 2/-9/spl times/10/sup 3/ cm/s) at the active surface is also considered.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127094689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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