F. Mitu, F. Draghici, G. Dillmot, G. Brezeanu, I. Enache
{"title":"GTO gating circuit by open cathode method","authors":"F. Mitu, F. Draghici, G. Dillmot, G. Brezeanu, I. Enache","doi":"10.1109/SMICND.1997.651562","DOIUrl":null,"url":null,"abstract":"A GTO turn-off circuit by open cathode technique is presented. This circuit provides the high turn-off speed, low losses and the improving of dV/dt capability for GTO thyristors.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1997.651562","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A GTO turn-off circuit by open cathode technique is presented. This circuit provides the high turn-off speed, low losses and the improving of dV/dt capability for GTO thyristors.