Zinc diffusion from a reactively sputtered glass source in GaAs

Abstract

A low temperature reactive ion-plasma sputtering technique is used to obtain a zinc diffusion source in the form of zinc silicate glass (ZSG). Diffusion parameters of Zn in GaAs are evaluated in the temperature range of 470-700/spl deg/C. The developed original technology simplifies the diffusion process, allows to the perform doping procedure in open tubes and inert atmospheres without encapsulation. The surface concentration can be regulated in the wide range from 10/sup 16/ to 10/sup 20/ cm/sup -3/.