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1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings最新文献

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Contribution of gas phase reactions to the growth rate of LPCVD silicon films in the temperature range from 500 to 550/spl deg/C 在温度500 ~ 550℃范围内，气相反应对LPCVD硅膜生长速率的贡献
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651587
C. Cobianu, P. Cosmin, M. Modreanu, D. Dascalu, J. Holleman
{"title":"Contribution of gas phase reactions to the growth rate of LPCVD silicon films in the temperature range from 500 to 550/spl deg/C","authors":"C. Cobianu, P. Cosmin, M. Modreanu, D. Dascalu, J. Holleman","doi":"10.1109/SMICND.1997.651587","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651587","url":null,"abstract":"In this paper we have investigated the low pressure chemical vapor deposition (LPCVD) of undoped silicon films from SiH/sub 4/ at low temperatures in the range of 500-550/spl deg/C and the pressure range of 20-100 Pa by means of a variable distance between wafers, ranging from 6 to 60 mm within the same run of an industrial reactor. A simple plug flow model was fitted to the experimental data in order to determine the kinetic constants of the gas phase and surface reactions responsible for the film deposition.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124968249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Photovaricaps on ZnIn/sub 2/S/sub 4/ and CdGaInS/sub 4/ ZnIn/sub 2/S/sub 4/和cdgain /sub 4/的光变
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651595
S. Radautsan, E. Arama, V. Zhitar’, N. Moldovyan
{"title":"Photovaricaps on ZnIn/sub 2/S/sub 4/ and CdGaInS/sub 4/","authors":"S. Radautsan, E. Arama, V. Zhitar’, N. Moldovyan","doi":"10.1109/SMICND.1997.651595","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651595","url":null,"abstract":"The paper presents the results of investigation of photovaricaps based on Pt-ZnIn/sub 2/S/sub 4/ (CdGaInS/sub 4/) with the working spectral region corresponding to the impurity band of absorption. The parameters of the (10/sup 3/ Hz) photovaricaps having a super position coefficient of capacity (4-20) and the quality factor (10-60) have been defined.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127853769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Modal behaviour of weak index guided stripes in low confinement laser diodes 低约束激光二极管中弱折射率引导条纹的模态行为
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651268
M. Buda, D. Diaconescu, G. Iordache, D. Cengher
{"title":"Modal behaviour of weak index guided stripes in low confinement laser diodes","authors":"M. Buda, D. Diaconescu, G. Iordache, D. Cengher","doi":"10.1109/SMICND.1997.651268","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651268","url":null,"abstract":"This paper presents the optical field behaviour of relatively large stripes, long laser diodes. The devices were designed to operate in the fundamental lateral mode. The stripe width, of order of 16 /spl mu/m, involves a very low refractive index step at the ridge edges and the operation of the diode in the weak index guided regime. This index profile and subsequently, the optical field distribution is very easily disturbed by carrier injection or by temperature. The paper aims to characterise the influence of direct current intensity on lateral far field.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117054711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On porosity and pore size distribution of macroporous silicon layers by scanning electron microscopy investigations 用扫描电镜研究大孔硅层的孔隙率和孔径分布
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651576
C. Gherasim-Vrinceanu, G. Crăciun, A. Dafinei, E. Vasile, C. Flueraru
{"title":"On porosity and pore size distribution of macroporous silicon layers by scanning electron microscopy investigations","authors":"C. Gherasim-Vrinceanu, G. Crăciun, A. Dafinei, E. Vasile, C. Flueraru","doi":"10.1109/SMICND.1997.651576","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651576","url":null,"abstract":"Porous silicon layers, with different morphologies, obtained by anodic etching were investigated by scanning electron microscopy (SEM). The paper includes a statistical analysis of pores size using a line-method on SEM micrographs and a discussion about the influence of anodization parameters on depth, porosity and etch rates of porous silicon layers.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122800855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrical properties of porous silicon stabilised by storage in ambient 多孔硅的电性能经环境贮存稳定
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651575
M. Ciurea, M. Lazar, S. Lazanu, E. Pentia, V. Dragoi
{"title":"Electrical properties of porous silicon stabilised by storage in ambient","authors":"M. Ciurea, M. Lazar, S. Lazanu, E. Pentia, V. Dragoi","doi":"10.1109/SMICND.1997.651575","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651575","url":null,"abstract":"The electrical transport of stabilised porous silicon layers was investigated. The samples were stored in ambient for 1.5-2 years. A MIS-like C-V characteristic, a strong rectifying I-V curve and I-T dependence with two activation energies were obtained. Thermally stimulated depolarisation currents have an activation energy of 0.81-0.87 eV. The electrical properties are discussed in the frame of a quantum confinement model, keeping into account the surface component.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123385906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural effects in electrical conductivity of SnO/sub 2/ thin films SnO/ sub2 /薄膜电导率的结构效应
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651244
A. Ivashchenko, I. Kerner
{"title":"Structural effects in electrical conductivity of SnO/sub 2/ thin films","authors":"A. Ivashchenko, I. Kerner","doi":"10.1109/SMICND.1997.651244","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651244","url":null,"abstract":"Electrical conductivity in SnO/sub 2/ thin films is studied within the framework of percolation theory. To improve the agreement between experiment and theory the effect of film microstructure was taken into account by chose the uniform function for energy distribution of intergrain barrier heights.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115801407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Propagation of "dark solitons" in ferritic monocrystalline film at microwave frequencies 微波频率下铁素体单晶薄膜中“暗孤子”的传播
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651190
M. Dragoman, R. Marcelli, G. Sajin
{"title":"Propagation of \"dark solitons\" in ferritic monocrystalline film at microwave frequencies","authors":"M. Dragoman, R. Marcelli, G. Sajin","doi":"10.1109/SMICND.1997.651190","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651190","url":null,"abstract":"the paper presents the theory and the experimental results of the dark soliton propagation at microwave frequencies. These short microwave pulses are almost unperturbated by the noise background and have promising applications in the microwave signal processing, ultrafast signal techniques and the enhancement of the signal to noise ratio.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132201916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental results on epitaxial-emitter and implanted-emitter high voltage silicon carbide diodes 外延发射极和植入发射极高压碳化硅二极管的实验结果
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651600
M. Locatelli, D. Planson, S. Ortolland, F. Lanois, J. Chante
{"title":"Experimental results on epitaxial-emitter and implanted-emitter high voltage silicon carbide diodes","authors":"M. Locatelli, D. Planson, S. Ortolland, F. Lanois, J. Chante","doi":"10.1109/SMICND.1997.651600","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651600","url":null,"abstract":"Experimental results of reverse electrical characteristics of high voltage bipolar diodes are reported. Junction diameter, environment, and techniques for junction creation and periphery protection influences on breakdown are investigated. These results on mesa and planar structures are representative of the main current difficulties for reproducible realisation of SiC high power devices.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123861814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Accuracy improvements in microwave transistor noise parameters extraction 微波晶体管噪声参数提取精度的提高
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651186
G. Vasilescu, G. Alquié
{"title":"Accuracy improvements in microwave transistor noise parameters extraction","authors":"G. Vasilescu, G. Alquié","doi":"10.1109/SMICND.1997.651186","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651186","url":null,"abstract":"This paper presents the influence of the choice of source admittances on the accuracy of noise parameters extraction, when using the noise parameter extraction method proposed by Vasilescu. The results obtained for three different microwave transistors are presented. The best and the worst distributions are put into evidence.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123444666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Dependence of the noise resistance of microwave FET's from the device characteristics 微波场效应管的抗噪声特性与器件特性的关系
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651199
A. Caddemi, F. Di Prima, M. Sannino
{"title":"Dependence of the noise resistance of microwave FET's from the device characteristics","authors":"A. Caddemi, F. Di Prima, M. Sannino","doi":"10.1109/SMICND.1997.651199","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651199","url":null,"abstract":"The noise parameters F/sub 0/, /spl Gamma//sub 0/ and r/sub n/ are a complete representation of the noise performance of any linear twoport. We focus upon r/sub n/ which is a measure of the noise figure degradation when the source reflection coefficient departs from the optimum value /spl Gamma//sub 0/. In the present paper, the behaviour of r/sub n/ is analysed as a function of the main elements of the noisy electrical model which reproduces the device performance. Such a study is aimed at evidencing the factors which allow for decreasing either the values and the frequency-dependence of r/sub n/. By optimizing r/sub n/, great improvements can be obtained in the performance of broad-band microwave low-noise amplifiers.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116019320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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