用扫描电镜研究大孔硅层的孔隙率和孔径分布

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI:10.1109/SMICND.1997.651576

C. Gherasim-Vrinceanu, G. Crăciun, A. Dafinei, E. Vasile, C. Flueraru

{"title":"用扫描电镜研究大孔硅层的孔隙率和孔径分布","authors":"C. Gherasim-Vrinceanu, G. Crăciun, A. Dafinei, E. Vasile, C. Flueraru","doi":"10.1109/SMICND.1997.651576","DOIUrl":null,"url":null,"abstract":"Porous silicon layers, with different morphologies, obtained by anodic etching were investigated by scanning electron microscopy (SEM). The paper includes a statistical analysis of pores size using a line-method on SEM micrographs and a discussion about the influence of anodization parameters on depth, porosity and etch rates of porous silicon layers.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"On porosity and pore size distribution of macroporous silicon layers by scanning electron microscopy investigations\",\"authors\":\"C. Gherasim-Vrinceanu, G. Crăciun, A. Dafinei, E. Vasile, C. Flueraru\",\"doi\":\"10.1109/SMICND.1997.651576\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Porous silicon layers, with different morphologies, obtained by anodic etching were investigated by scanning electron microscopy (SEM). The paper includes a statistical analysis of pores size using a line-method on SEM micrographs and a discussion about the influence of anodization parameters on depth, porosity and etch rates of porous silicon layers.\",\"PeriodicalId\":144314,\"journal\":{\"name\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"volume\":\"73 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1997.651576\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1997.651576","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

用扫描电镜研究了阳极腐蚀法制备的不同形貌的多孔硅层。本文采用扫描电镜线法对多孔硅层的孔隙尺寸进行了统计分析，并讨论了阳极氧化参数对多孔硅层深度、孔隙率和蚀刻速率的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

On porosity and pore size distribution of macroporous silicon layers by scanning electron microscopy investigations

Porous silicon layers, with different morphologies, obtained by anodic etching were investigated by scanning electron microscopy (SEM). The paper includes a statistical analysis of pores size using a line-method on SEM micrographs and a discussion about the influence of anodization parameters on depth, porosity and etch rates of porous silicon layers.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings

自引率

0.00%

发文量