On porosity and pore size distribution of macroporous silicon layers by scanning electron microscopy investigations

Abstract

Porous silicon layers, with different morphologies, obtained by anodic etching were investigated by scanning electron microscopy (SEM). The paper includes a statistical analysis of pores size using a line-method on SEM micrographs and a discussion about the influence of anodization parameters on depth, porosity and etch rates of porous silicon layers.