Electrical properties of porous silicon stabilised by storage in ambient

Abstract

The electrical transport of stabilised porous silicon layers was investigated. The samples were stored in ambient for 1.5-2 years. A MIS-like C-V characteristic, a strong rectifying I-V curve and I-T dependence with two activation energies were obtained. Thermally stimulated depolarisation currents have an activation energy of 0.81-0.87 eV. The electrical properties are discussed in the frame of a quantum confinement model, keeping into account the surface component.