C. Cobianu, P. Cosmin, M. Modreanu, D. Dascalu, J. Holleman
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Contribution of gas phase reactions to the growth rate of LPCVD silicon films in the temperature range from 500 to 550/spl deg/C
In this paper we have investigated the low pressure chemical vapor deposition (LPCVD) of undoped silicon films from SiH/sub 4/ at low temperatures in the range of 500-550/spl deg/C and the pressure range of 20-100 Pa by means of a variable distance between wafers, ranging from 6 to 60 mm within the same run of an industrial reactor. A simple plug flow model was fitted to the experimental data in order to determine the kinetic constants of the gas phase and surface reactions responsible for the film deposition.
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