Performance of InAs photoelectromagnetic infrared detectors at room temperature

Abstract

The spectral distribution of the open-circuit voltage and the spectral responsivity over the range (1.0-5.0 /spl mu/m) for InAs photoelectromagnetic (PEM) near-infrared (NIR) detector at 300 K are presented. The correlation between material parameters, geometrical dimensions and the detector performance is discussed. The surface recombination velocity (10/sup 2/-9/spl times/10/sup 3/ cm/s) at the active surface is also considered.