室温下InAs光电磁红外探测器的性能

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI:10.1109/SMICND.1997.651265

M. Logofatu, B. Logofatu, C. Grigorescu, I. Munteanu

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引用次数: 1

摘要

给出了InAs光电磁(PEM)近红外(NIR)探测器在300 K时开路电压的光谱分布和1.0 ~ 5.0 /spl μ m范围内的光谱响应度。讨论了材料参数、几何尺寸与探测器性能的关系。还考虑了活性表面的表面复合速度(10/sup 2/-9/spl次/10/sup 3/ cm/s)。

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Performance of InAs photoelectromagnetic infrared detectors at room temperature

The spectral distribution of the open-circuit voltage and the spectral responsivity over the range (1.0-5.0 /spl mu/m) for InAs photoelectromagnetic (PEM) near-infrared (NIR) detector at 300 K are presented. The correlation between material parameters, geometrical dimensions and the detector performance is discussed. The surface recombination velocity (10/sup 2/-9/spl times/10/sup 3/ cm/s) at the active surface is also considered.

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1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings

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