{"title":"Gummel-Poon模型的两个简单扩展","authors":"B. Tudor, Mihai-Dan Steriu","doi":"10.1109/SMICND.1997.651564","DOIUrl":null,"url":null,"abstract":"In this paper two extensions to the widely used Gummel-Poon model for bipolar junction transistors are proposed. Good modeling results are illustrated in the case of polysilicon emitter BJTs.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"136 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Two simple extensions to the Gummel-Poon model\",\"authors\":\"B. Tudor, Mihai-Dan Steriu\",\"doi\":\"10.1109/SMICND.1997.651564\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper two extensions to the widely used Gummel-Poon model for bipolar junction transistors are proposed. Good modeling results are illustrated in the case of polysilicon emitter BJTs.\",\"PeriodicalId\":144314,\"journal\":{\"name\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"volume\":\"136 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1997.651564\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1997.651564","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper two extensions to the widely used Gummel-Poon model for bipolar junction transistors are proposed. Good modeling results are illustrated in the case of polysilicon emitter BJTs.
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