Electrical behavior of 6H-SiC pn diodes

Abstract

The electrical I-V, C-V characteristics of 6H-SiC epitaxial pn diodes are measured and analyzed. The devices are fabricated in a simple technology, using a single epilayer. The measured breakdown voltage of about 200 V is in good agreement with the calculated value. The saturation currents, I/sub od/=3.67/spl times/10/sup -51/ A, I/sub cr/=5.6/spl times/10/sup -24/ A, and the equivalent ionized impurities concentration, N/sub aq/=1.4/spl times/10/sup 17/ cm/sup -3/, are obtained by optimal extraction.