硼在硅中扩散自限过程中的化学蚀刻控制:分析结果

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI:10.1109/SMICND.1997.651590

F. Găiseanu, D. Tsoukalas, J. Esteve, C. Postolache, D. Goustouridis, E. Tsoi

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引用次数: 7

摘要

作者提出了包含高掺杂硅层和本征硼扩散区对化学蚀刻速率和化学蚀刻时间影响的分析模型，使人们能够控制自限化学蚀刻过程以获得硅微机械元件。

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Chemical etching control during the self-limitation process by boron diffusion in silicon: Analytical results

The authors present an analytical model including the influence of the highly-doped silicon layer and of the intrinsic boron diffusion region on the chemical etching rate and on the chemical etching time, allowing one to control the self-limitation chemical etching process to obtain silicon micromechanical elements.

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1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings

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