{"title":"Hydrogen implantation in polycrystalline ZnO thin films","authors":"V. Bogatu, A. Goldenblum, B. Logonfatu","doi":"10.1109/SMICND.1997.651546","DOIUrl":null,"url":null,"abstract":"The paper presents the first results obtained on the hydrogen ion implantation in polycrystalline ZnO thin films. The ion implantation was carried out with a Kaufman type ion source. The results obtained after the experimental determination of the penetration depth are very close to the ones computed on the basis of the usual theory for monocrystals.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1997.651546","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The paper presents the first results obtained on the hydrogen ion implantation in polycrystalline ZnO thin films. The ion implantation was carried out with a Kaufman type ion source. The results obtained after the experimental determination of the penetration depth are very close to the ones computed on the basis of the usual theory for monocrystals.