Hydrogen implantation in polycrystalline ZnO thin films

V. Bogatu, A. Goldenblum, B. Logonfatu
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Abstract

The paper presents the first results obtained on the hydrogen ion implantation in polycrystalline ZnO thin films. The ion implantation was carried out with a Kaufman type ion source. The results obtained after the experimental determination of the penetration depth are very close to the ones computed on the basis of the usual theory for monocrystals.
多晶ZnO薄膜中的氢注入
本文介绍了氢离子注入多晶ZnO薄膜的初步结果。离子注入采用Kaufman型离子源。实验测定的穿透深度与一般单晶理论计算的结果非常接近。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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