作为微波电路支撑的介质和半导体膜

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI:10.1109/SMICND.1997.651315

A. Muller, I. Petrini, V. Avramescu, R. Muller, D. Vasilache, P. Cosmin, I. Cernica, R. Marcelli, V. Fogllieti

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引用次数: 4

摘要

在硅衬底上制备了一种1.5 /spl μ m /m的SiO/sub 2//Si/sub 3/N/sub 4//SiO/sub 2/薄膜。采用新型蚀刻液制备了10-20 μ l /m的砷化镓薄膜。这两种类型的膜都注定要用作微波电路的支撑;这对电路的性能有很大的改善。

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Dielectric and semiconductor membranes as support for microwave circuits

A 1.5 /spl mu/m thin SiO/sub 2//Si/sub 3/N/sub 4//SiO/sub 2/ membrane was manufactured on <100> Silicon substrate. Also a 10-20 /spl mu/m thin GaAs membrane was manufactured using a new etching solution. Both types of membranes are destined to be used as support for microwave circuits; this has as effect a major improvement of circuits' performances.

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1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings

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