{"title":"多晶ZnO薄膜中的氢注入","authors":"V. Bogatu, A. Goldenblum, B. Logonfatu","doi":"10.1109/SMICND.1997.651546","DOIUrl":null,"url":null,"abstract":"The paper presents the first results obtained on the hydrogen ion implantation in polycrystalline ZnO thin films. The ion implantation was carried out with a Kaufman type ion source. The results obtained after the experimental determination of the penetration depth are very close to the ones computed on the basis of the usual theory for monocrystals.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Hydrogen implantation in polycrystalline ZnO thin films\",\"authors\":\"V. Bogatu, A. Goldenblum, B. Logonfatu\",\"doi\":\"10.1109/SMICND.1997.651546\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents the first results obtained on the hydrogen ion implantation in polycrystalline ZnO thin films. The ion implantation was carried out with a Kaufman type ion source. The results obtained after the experimental determination of the penetration depth are very close to the ones computed on the basis of the usual theory for monocrystals.\",\"PeriodicalId\":144314,\"journal\":{\"name\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1997.651546\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1997.651546","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hydrogen implantation in polycrystalline ZnO thin films
The paper presents the first results obtained on the hydrogen ion implantation in polycrystalline ZnO thin films. The ion implantation was carried out with a Kaufman type ion source. The results obtained after the experimental determination of the penetration depth are very close to the ones computed on the basis of the usual theory for monocrystals.
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