Si/sub - 1-x/Ge/sub -x/ Si的低压化学气相沉积外延生长及其应用

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI:10.1109/SMICND.1997.651223

L. Vescan, M. Goryll, K. Grimm, S. Wickenhauser, T. Stoica

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引用次数: 0

摘要

研究了硅和SiGe的低压化学气相沉积技术在微电子和光电子器件中的应用。本文将介绍微晶面的形成、微晶面的侧向约束纳米结构、有限衬垫中临界厚度的增加、二维到三维的生长转变以及在室温下发光二极管中的应用。

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Epitaxial growth by low pressure chemical vapour deposition of Si/sub 1-x/Ge/sub x//Si and applications

Low pressure chemical vapour deposition of Si and SiGe was investigated for novel devices for microelectronics and optoelectronics. Results on facet formation, nanostructures by lateral confinement with facets, increase of the critical thickness in finite pads, 2D to 3D growth transition and application to light emitting diodes with room temperature operation will be presented.

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1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings

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