利用电荷泵送技术研究近Si-SiO/sub - 2/界面陷阱层

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI:10.1109/SMICND.1997.651565

Y. Maneglia, D. Bauza

{"title":"利用电荷泵送技术研究近Si-SiO/sub - 2/界面陷阱层","authors":"Y. Maneglia, D. Bauza","doi":"10.1109/SMICND.1997.651565","DOIUrl":null,"url":null,"abstract":"It is shown that the charge pumping technique allows the extraction of the Si-SiO/sub 2/ interface depth trap concentration profile. This profile is found of the form N/sub t/(x)=N/sub ts/ exp(-x/d)+N/sub to/ where d is the distance in the oxide from the interface. The method is discussed as well as the expression of the trap density obtained.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Study of the near Si-SiO/sub 2/ interface trap layer using the charge pumping technique\",\"authors\":\"Y. Maneglia, D. Bauza\",\"doi\":\"10.1109/SMICND.1997.651565\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is shown that the charge pumping technique allows the extraction of the Si-SiO/sub 2/ interface depth trap concentration profile. This profile is found of the form N/sub t/(x)=N/sub ts/ exp(-x/d)+N/sub to/ where d is the distance in the oxide from the interface. The method is discussed as well as the expression of the trap density obtained.\",\"PeriodicalId\":144314,\"journal\":{\"name\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1997.651565\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1997.651565","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

结果表明，电荷泵送技术可以提取出Si-SiO/sub - 2/界面深度陷阱浓度分布图。该曲线的形式为N/下标t/(x)=N/下标ts/ exp(-x/d)+N/下标to/，其中d是氧化物到界面的距离。讨论了该方法，并给出了陷阱密度的表达式。

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Study of the near Si-SiO/sub 2/ interface trap layer using the charge pumping technique

It is shown that the charge pumping technique allows the extraction of the Si-SiO/sub 2/ interface depth trap concentration profile. This profile is found of the form N/sub t/(x)=N/sub ts/ exp(-x/d)+N/sub to/ where d is the distance in the oxide from the interface. The method is discussed as well as the expression of the trap density obtained.

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1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings

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