Lateral bipolar magnetotransistors with enhanced emitter injection modulation and carrier deflection

Abstract

Two types of integrated magnetotransistors based on enhanced modulation of emitter injection and carrier deflection are presented. The absolute magnetosensitivity of the devices is about 1 to 5 mV/mT. The relative magnetosensitivity is in the range 1-5 T/sup -1/ at collector currents of the order of 0.5 mA. Between the magnetic field and the output signal exists a linear dependence for certain biasing conditions.