Study of the near Si-SiO/sub 2/ interface trap layer using the charge pumping technique

Abstract

It is shown that the charge pumping technique allows the extraction of the Si-SiO/sub 2/ interface depth trap concentration profile. This profile is found of the form N/sub t/(x)=N/sub ts/ exp(-x/d)+N/sub to/ where d is the distance in the oxide from the interface. The method is discussed as well as the expression of the trap density obtained.