{"title":"InP/InGaAs HBTs发射基结处的异常电流注入现象","authors":"D. Sachelarie, M. Sachelarie","doi":"10.1109/SMICND.1997.651602","DOIUrl":null,"url":null,"abstract":"An analysis of the injection phenomena in the InP/InGaAs heterojunction bipolar transistors passivated with Si/sub 3/N/sub 4/ has been made. Two different mechanisms are shown to be responsible for the anomalous carrier injection at the emitter-base heterojunction in the low voltage range. One is based on the thermionic emission in an accumulation region along the emitter edges and the other based on the preferential electron tunnelling, also in a thin region along the emitter edges.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Anomalous current injection phenomena at the emitter-base junction of InP/InGaAs HBTs\",\"authors\":\"D. Sachelarie, M. Sachelarie\",\"doi\":\"10.1109/SMICND.1997.651602\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An analysis of the injection phenomena in the InP/InGaAs heterojunction bipolar transistors passivated with Si/sub 3/N/sub 4/ has been made. Two different mechanisms are shown to be responsible for the anomalous carrier injection at the emitter-base heterojunction in the low voltage range. One is based on the thermionic emission in an accumulation region along the emitter edges and the other based on the preferential electron tunnelling, also in a thin region along the emitter edges.\",\"PeriodicalId\":144314,\"journal\":{\"name\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1997.651602\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1997.651602","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Anomalous current injection phenomena at the emitter-base junction of InP/InGaAs HBTs
An analysis of the injection phenomena in the InP/InGaAs heterojunction bipolar transistors passivated with Si/sub 3/N/sub 4/ has been made. Two different mechanisms are shown to be responsible for the anomalous carrier injection at the emitter-base heterojunction in the low voltage range. One is based on the thermionic emission in an accumulation region along the emitter edges and the other based on the preferential electron tunnelling, also in a thin region along the emitter edges.