InP/InGaAs HBTs发射基结处的异常电流注入现象

D. Sachelarie, M. Sachelarie
{"title":"InP/InGaAs HBTs发射基结处的异常电流注入现象","authors":"D. Sachelarie, M. Sachelarie","doi":"10.1109/SMICND.1997.651602","DOIUrl":null,"url":null,"abstract":"An analysis of the injection phenomena in the InP/InGaAs heterojunction bipolar transistors passivated with Si/sub 3/N/sub 4/ has been made. Two different mechanisms are shown to be responsible for the anomalous carrier injection at the emitter-base heterojunction in the low voltage range. One is based on the thermionic emission in an accumulation region along the emitter edges and the other based on the preferential electron tunnelling, also in a thin region along the emitter edges.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Anomalous current injection phenomena at the emitter-base junction of InP/InGaAs HBTs\",\"authors\":\"D. Sachelarie, M. Sachelarie\",\"doi\":\"10.1109/SMICND.1997.651602\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An analysis of the injection phenomena in the InP/InGaAs heterojunction bipolar transistors passivated with Si/sub 3/N/sub 4/ has been made. Two different mechanisms are shown to be responsible for the anomalous carrier injection at the emitter-base heterojunction in the low voltage range. One is based on the thermionic emission in an accumulation region along the emitter edges and the other based on the preferential electron tunnelling, also in a thin region along the emitter edges.\",\"PeriodicalId\":144314,\"journal\":{\"name\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1997.651602\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1997.651602","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

对Si/sub 3/N/sub 4/钝化的InP/InGaAs异质结双极晶体管中的注入现象进行了分析。在低电压范围内,两种不同的机制导致了发射基异质结的异常载流子注入。一种是基于沿发射极边缘的积累区内的热离子发射,另一种是基于同样在沿发射极边缘的薄区内的优先电子隧穿。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Anomalous current injection phenomena at the emitter-base junction of InP/InGaAs HBTs
An analysis of the injection phenomena in the InP/InGaAs heterojunction bipolar transistors passivated with Si/sub 3/N/sub 4/ has been made. Two different mechanisms are shown to be responsible for the anomalous carrier injection at the emitter-base heterojunction in the low voltage range. One is based on the thermionic emission in an accumulation region along the emitter edges and the other based on the preferential electron tunnelling, also in a thin region along the emitter edges.
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