A thick film semiconductor NO/sub x/ detector

Abstract

The paper presents a NO/sub x/ detector made by thick film technology. The two plated electrodes using a conductive Pd-Ag ink were deposited on one side of the alumina substrate. A thick-film heater material is pasted on the other side of the substrate the sensitive film, was produced, by a TiO/sub 2/-Al/sub 2/O/sub 3/ resistive ink. The device electrical resistance decrease from 200 K/spl Omega/ in pure air to 36 K/spl Omega/ in a 2000 ppm NO/sub x/ atmosphere for a working temperature of 450/spl deg/C.