{"title":"各向异性蚀刻图——另一种看待它们的方式","authors":"N. Moldovan, S. Nedelcu, M. Diculescu","doi":"10.1109/SMICND.1997.651322","DOIUrl":null,"url":null,"abstract":"Starting from a simple model for the step movement, a new interpretation is given to the anisotropic etching angular diagrams. The etching rates along a few main directions, corresponding to some fundamental mechanisms of etching, can explain entirely the complex form of the diagrams. This reduces drastically the number of parameters necessary to describe the diagrams and shows that STM investigations for deducing the mechanisms of etching have to be made only for a limited number of planes.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Anisotropic etching diagrams-another way to look at them\",\"authors\":\"N. Moldovan, S. Nedelcu, M. Diculescu\",\"doi\":\"10.1109/SMICND.1997.651322\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Starting from a simple model for the step movement, a new interpretation is given to the anisotropic etching angular diagrams. The etching rates along a few main directions, corresponding to some fundamental mechanisms of etching, can explain entirely the complex form of the diagrams. This reduces drastically the number of parameters necessary to describe the diagrams and shows that STM investigations for deducing the mechanisms of etching have to be made only for a limited number of planes.\",\"PeriodicalId\":144314,\"journal\":{\"name\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1997.651322\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1997.651322","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Anisotropic etching diagrams-another way to look at them
Starting from a simple model for the step movement, a new interpretation is given to the anisotropic etching angular diagrams. The etching rates along a few main directions, corresponding to some fundamental mechanisms of etching, can explain entirely the complex form of the diagrams. This reduces drastically the number of parameters necessary to describe the diagrams and shows that STM investigations for deducing the mechanisms of etching have to be made only for a limited number of planes.