The intrinsic pseudo-MOSFET technique

Abstract

In situ electrical characterization is extremely important for SOI wafer fabrication because it allows material evaluation prior to any device processing. The aim of this paper is to report on the development of the intrinsic pseudo-MOSFET electrical characterization method (4-point probe method), which significantly improves the precision of the electrical parameter determination for SOI wafers. A thorough comparison between the 2-point and the 4-point methods is also presented.