IEEE Journal of the Electron Devices Society最新文献_第9页

Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer 晶圆级单片集成 LED 与 GaN LED 外延层上的 p-GaN 损耗 MOSFET

IF 2 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-09-06 DOI: 10.1109/JEDS.2024.3455256

Boseong Son;Huijin Kim;Young-Woong Lee;Purusottam Reddy Bommireddy;Si-Hyun Park

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Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation 肖特基栅p-GaN HEMT中栅极可靠性的负活化能：栅极漏电流建模与光谱电致发光调查相结合

IF 2 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-09-04 DOI: 10.1109/JEDS.2024.3454334

Manuel Fregolent;Mirco Boito;Michele Disarò;Carlo De Santi;Matteo Buffolo;Eleonora Canato;Michele Gallo;Cristina Miccoli;Isabella Rossetto;Giansalvo Pizzo;Alfio Russo;Ferdinando Iucolano;Gaudenzio Meneghesso;Enrico Zanoni;Matteo Meneghini

{"title":"Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation","authors":"Manuel Fregolent;Mirco Boito;Michele Disarò;Carlo De Santi;Matteo Buffolo;Eleonora Canato;Michele Gallo;Cristina Miccoli;Isabella Rossetto;Giansalvo Pizzo;Alfio Russo;Ferdinando Iucolano;Gaudenzio Meneghesso;Enrico Zanoni;Matteo Meneghini","doi":"10.1109/JEDS.2024.3454334","DOIUrl":"10.1109/JEDS.2024.3454334","url":null,"abstract":"For the first time, we use electrical characterization, spectrally-resolved electroluminescence measurements and degradation tests to explain the negative activation energy of gate reliability in power GaN HEMTs with p-GaN Schottky gate. First, the origin of gate leakage current was modeled. The results indicate that the gate leakage current originates from three different mechanisms: (i) thermionic emission of electrons from the uid-GaN layer across the AlGaN barrier, for gate voltages below threshold \u0000<inline-formula> <tex-math>$(V_{G} lt V_{TH})$ </tex-math></inline-formula>\u0000, (ii) thermionic emission of electrons from the channel to the p-GaN layer \u0000<inline-formula> <tex-math>$(V_{TH} lt V_{G} lt 4.5 V)$ </tex-math></inline-formula>\u0000 and (iii) trap-assisted-tunneling of holes at the Schottky metal for higher gate voltages. Then, the analysis of the reliability as function of gate bias demonstrated a negative activation energy (longer lifetime at high temperature). By analyzing the electroluminescence spectra under high positive bias, the improved time to failure at high temperatures was ascribed to the increased hole injection and recombination, that reduces the overall number of electrons that undergo avalanche multiplication, leading to the breakdown. Finally, the model was validated by comparing the electrical properties and conduction model of the devices pre- and post-stress.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"703-709"},"PeriodicalIF":2.0,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10664574","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142225426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Highly Uniform Low Gray AMOLED Pixel Using Stable Circuit and Duty Ratio Modulation Driving 利用稳定电路和占空比调制驱动高度均匀的低灰度 AMOLED 像素

IF 2 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-09-02 DOI: 10.1109/JEDS.2024.3452753

Chanjin Park;Hee-Ok Kim;Jong-Heon Yang;Jae-Eun Pi;Yong-Duck Kim;Chun-Won Byun;Kyeong-Soo Kang;Ji-Hwan Park;Minji Kim;Hyoungsik Nam;Soo-Yeon Lee

{"title":"Highly Uniform Low Gray AMOLED Pixel Using Stable Circuit and Duty Ratio Modulation Driving","authors":"Chanjin Park;Hee-Ok Kim;Jong-Heon Yang;Jae-Eun Pi;Yong-Duck Kim;Chun-Won Byun;Kyeong-Soo Kang;Ji-Hwan Park;Minji Kim;Hyoungsik Nam;Soo-Yeon Lee","doi":"10.1109/JEDS.2024.3452753","DOIUrl":"https://doi.org/10.1109/JEDS.2024.3452753","url":null,"abstract":"In this paper, a new pixel circuit for active matrix organic light-emitting diode (AMOLED) display that can achieve high uniformity in low gray levels and its driving method are proposed. The proposed circuit compensates for threshold voltage variation of thin-film-transistors (TFTs), with the structure that minimizes the loss of sensed threshold voltage. However, the high current error rate in extremely low gray level is unavoidable, as the driving TFT (DRT) operates in subthreshold region, where the current difference caused by the threshold voltage variation can be severe. To suppress high error rates in low gray levels, the operation region of DRT is restricted to the saturation region, by adopting duty ratio modulation (DRM) method. With the DRM method, low gray is expressed with high current value and short emission time. The viability of the proposed circuit and its operation are analyzed with HSPICE. Compared to the conventional driving method, DRM significantly reduces the current error rate in low gray area. The proposed circuit is fabricated within 220 \u0000<inline-formula> <tex-math>$mu {mathrm {m}} times 440 mu {mathrm {m}}$ </tex-math></inline-formula>\u0000. The measurement of the circuit also verified the capability of the proposed circuit and the DRM method.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"668-676"},"PeriodicalIF":2.0,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10663295","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142159891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure Measurement 从射频噪声系数测量中确定亚微米 MOSFET 噪声模型参数的方法

IF 2 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-09-02 DOI: 10.1109/JEDS.2024.3453408

Hanqi Gao;Jing Jin;Jianjun Zhou

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High Power 190 GHz Frequency Doubler Based On GaAs Schottky Diode 基于砷化镓肖特基二极管的 190 GHz 高功率倍频器基座

IF 2 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-09-02 DOI: 10.1109/JEDS.2024.3453122

Nan Wu;Zhi Jin;Jingtao Zhou;Haomiao Wei;Zhicheng Liu;Jianming Lin

引用次数: 0

Impact of the Scaling of LGS and LG on the On-State Breakdown Voltage of InAlN/GaN HFETs With Localized Fin Under the Gate Electrode 栅电极下有局部鳍片的 InAlN/GaN HFET 的 LGS 和 LG 缩放对通态击穿电压的影响

IF 2 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-08-26 DOI: 10.1109/JEDS.2024.3449798

Yatexu Patel;Pouya Valizadeh

引用次数: 0

Discrete-Trap Effects on 3-D NAND Variability – Part I: Threshold Voltage 离散阱对 3-D NAND 变异性的影响 - 第一部分：阈值电压

IF 2 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-08-21 DOI: 10.1109/JEDS.2024.3447149

Gerardo Malavena;Salvatore M. Amoroso;Andrew R. Brown;Plamen Asenov;Xi-Wei Lin;Victor Moroz;Mattia Giulianini;David Refaldi;Christian Monzio Compagnoni;Alessandro S. Spinelli

{"title":"Discrete-Trap Effects on 3-D NAND Variability – Part I: Threshold Voltage","authors":"Gerardo Malavena;Salvatore M. Amoroso;Andrew R. Brown;Plamen Asenov;Xi-Wei Lin;Victor Moroz;Mattia Giulianini;David Refaldi;Christian Monzio Compagnoni;Alessandro S. Spinelli","doi":"10.1109/JEDS.2024.3447149","DOIUrl":"https://doi.org/10.1109/JEDS.2024.3447149","url":null,"abstract":"In this two-part article we discuss the difference between a continuous and a discrete approach to trap modeling in the simulation of 3-D NAND Flash memories with polysilicon channel. In Part I we focus on threshold voltage \u0000<inline-formula> <tex-math>$({mathrm { V}}_{mathrm { T}})$ </tex-math></inline-formula>\u0000 fluctuations induced by traps and show that lower values for the average and rms \u0000<inline-formula> <tex-math>${mathrm { V}}_{mathrm { T}}$ </tex-math></inline-formula>\u0000 arise when the discrete nature of traps is accounted for. We explain such differences in terms of a stronger percolation that leads to a lower number of filled traps in the discrete-trap case, and investigate such differences as a function of cell parameters and temperature. Finally, we compare the two approaches showing that a continuous trap model cannot reproduce the correct dependences resulting from a discrete treatment.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"651-657"},"PeriodicalIF":2.0,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10643153","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142137553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Temperature-Dependent Electrical Characteristics and Low-Frequency Noise Analysis of AlGaN/GaN HEMTs AlGaN/GaN HEMT 随温度变化的电气特性和低频噪声分析

IF 2 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-08-21 DOI: 10.1109/JEDS.2024.3447022

Qiang Chen;Y. Q. Chen;Chang Liu;Zhiyuan He;Yuan Chen;K. W. Geng;Y. J. He;W. Y. Chen

{"title":"Temperature-Dependent Electrical Characteristics and Low-Frequency Noise Analysis of AlGaN/GaN HEMTs","authors":"Qiang Chen;Y. Q. Chen;Chang Liu;Zhiyuan He;Yuan Chen;K. W. Geng;Y. J. He;W. Y. Chen","doi":"10.1109/JEDS.2024.3447022","DOIUrl":"10.1109/JEDS.2024.3447022","url":null,"abstract":"In this paper, we investigate the electrical characteristics of AlGaN/GaN HEMTs at the lowest temperature of 20 K. The measurement results indicate that the output current of the device decreases significantly with increasing temperature at temperature ranging from 40 K to 260 K, and the saturation drain current decreases by 19%. The gate leakage current rises slightly when the temperature increases. However, both the transfer and C-V characteristics indicate that the threshold voltage shift slightly in a negative direction as the temperature rises. In order to determine the physical mechanism of electrical characteristics change, the low-frequency noise (LFN) characteristics at different temperatures were measured and the density of traps was extracted. Finally, we consider that there are two competing mechanisms affecting the electrical characteristics of devices. The trap density reduction caused by temperature rise leads to threshold voltage’s negative shift, while the drop of 2DEG mobility is the main reason for the decrease of output current.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"698-702"},"PeriodicalIF":2.0,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10643171","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142225428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise 离散陷阱对 3-D NAND 变异性的影响 - 第二部分：随机电报噪声

IF 2 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-08-21 DOI: 10.1109/JEDS.2024.3447150

Gerardo Malavena;Salvatore M. Amoroso;Andrew R. Brown;Plamen Asenov;Xi-Wei Lin;Victor Moroz;Mattia Giulianini;David Refaldi;Christian Monzio Compagnoni;Alessandro S. Spinelli

引用次数: 0

Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks 基于成本敏感型密集连接深度神经网络的设备建模

IF 2 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-08-21 DOI: 10.1109/JEDS.2024.3447032

Xiaoying Tang;Zhiqiang Li;Lang Zeng;Hongwei Zhou;Xiaoxu Cheng;Zhenjie Yao

{"title":"Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks","authors":"Xiaoying Tang;Zhiqiang Li;Lang Zeng;Hongwei Zhou;Xiaoxu Cheng;Zhenjie Yao","doi":"10.1109/JEDS.2024.3447032","DOIUrl":"https://doi.org/10.1109/JEDS.2024.3447032","url":null,"abstract":"Engineers used TCAD tools for semiconductor devices modeling. However, it is computationally expensive and time-consuming for advanced devices with smaller dimensions. Therefore, this work proposes a machine learning-based device modeling algorithm to capture the complex nonlinear relationship between parameters and electrical characteristics of gate-all-around (GAA) nanowire field-effect transistors (NWFETs) from technology computer-aided design (TCAD) simulation results. This method utilizes a densely connected deep neural networks (DenseDNN), which establishes direct connections between layers in the neural networks, provides stronger feature extraction and information transmission capabilities. By incorporating cost-sensitive learning methods, the proposed model focus more on the critical data that determines device characteristics, leading to accurate prediction of key device characteristics under various parameters. Experimental results on a test dataset of 116 NWFETs demonstrate the effectiveness of this method. The DenseDNN model with cost-sensitive learning exhibits better performance than traditional deep neural networks (DNN) with various widths and depths, with a prediction error below 1.62%. Moreover, compared to TCAD simulation results, the model can speedup \u0000<inline-formula> <tex-math>$10^{6}times$ </tex-math></inline-formula>\u0000.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"619-626"},"PeriodicalIF":2.0,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10643157","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142090777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0