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Efficient Quantum Dot Light-Emitting Diodes With DAA Doped Electron Transport Layer 具有 DAA 掺杂电子传输层的高效量子点发光二极管
IF 2.3 3区 工程技术
IEEE Journal of the Electron Devices Society Pub Date : 2024-03-28 DOI: 10.1109/JEDS.2024.3382874
Haomin Chen;Qunying Zeng;Yangbin Zhu;Tuo Wu;Yijie Fan;Tailiang Guo;Hailong Hu;Fushan Li
{"title":"Efficient Quantum Dot Light-Emitting Diodes With DAA Doped Electron Transport Layer","authors":"Haomin Chen;Qunying Zeng;Yangbin Zhu;Tuo Wu;Yijie Fan;Tailiang Guo;Hailong Hu;Fushan Li","doi":"10.1109/JEDS.2024.3382874","DOIUrl":"10.1109/JEDS.2024.3382874","url":null,"abstract":"Zinc oxidenanoparticles (ZnO NPs) is widely used as electron transport layer material in quantum dot light-emitting diodes (QLED) due to its high carrier mobility, unique photoelectric properties and good stability. However, because ZnO has higher electron mobility than organic hole transport materials, the carrier transport is unbalanced. In addition, ZnO NPs has many surface defects, which is easy to capture electrons or holes, increasing the probability of non-radiative recombination. To solve these problems, we carefully selected an organic compound diallylamine (DAA) doping method to modify the surface of ZnO. DAA is found to not only reduce the quenching at the interface between ZnO and QD, but also regulate the energy level position to promote the carrier injection balance of QLED devices. Compared with control ZnO QLED, the external quantum efficiency (EQE) of the red QLED with DAA-modified ZnO NPs is significantly improved, the peakEQE of the devices increased by 21% from 18.8% to 23.6%. respectively. It is a simple and economical solution for manufacturing high-performance QLED.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10485228","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140324058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications 利用厚铜金属化技术改善 AlGaN/GaN HEMT 噪声图，用于卫星通信应用
IF 2.3 3区 工程技术
IEEE Journal of the Electron Devices Society Pub Date : 2024-03-22 DOI: 10.1109/JEDS.2024.3381030
Howie Tseng;Yueh-Chin Lin;Chieh Cheng;Po-Wei Chen;Heng-Tung Hsu;Yi-Fan Tsao;Edward Yi Chang
{"title":"Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications","authors":"Howie Tseng;Yueh-Chin Lin;Chieh Cheng;Po-Wei Chen;Heng-Tung Hsu;Yi-Fan Tsao;Edward Yi Chang","doi":"10.1109/JEDS.2024.3381030","DOIUrl":"10.1109/JEDS.2024.3381030","url":null,"abstract":"In this study, AlGaN/GaN high-electron-mobility-transistor (HEMT) with thick Cu metallization is investigated, and the Radio Frequency (RF) performance and the reliability are analyzed. By applying thick Cu metallization of \u0000<inline-formula> <tex-math>$6.0 ~mu text{m}$ </tex-math></inline-formula>\u0000 as interconnect, the cut-off frequency (fT), the maximum oscillation frequency (fmax), and the power performance can be improved. Besides, the thick-Cu-metallized device exhibits reduced minimum noise figure (NFmin) of 0.7, 1.0, 2.2 and 2.8 dB at 12, 14, 28 and 38 GHz, respectively, which can be attributed to the reduction of the source and drain resistance caused by thick Cu metallization. Furthermore, for stress test under high drain-to-source voltage (VDS) and high temperature, the proposed device exhibits good stability. The results show that the thick Cu metallization technology has great potential to be applied in satellite communication system.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10478115","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140197315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bulk Carrier Contaminations and Their Effects on MOSFETs Under Energy Harvesting Systems 散装载体污染及其对能量收集系统下 MOSFET 的影响
IF 2.3 3区 工程技术
IEEE Journal of the Electron Devices Society Pub Date : 2024-03-21 DOI: 10.1109/JEDS.2024.3403649
Yuta Watanabe;Takaya Sugiura;Nobuhiko Nakano
{"title":"Bulk Carrier Contaminations and Their Effects on MOSFETs Under Energy Harvesting Systems","authors":"Yuta Watanabe;Takaya Sugiura;Nobuhiko Nakano","doi":"10.1109/JEDS.2024.3403649","DOIUrl":"10.1109/JEDS.2024.3403649","url":null,"abstract":"Energy harvesters, such as photovoltaic cells, generate carriers in the deep substrate regions; these carriers can affect MOSFETs and deteriorate their performance or even cause malfunctioning. In this study, we discussed the effects of bulk carrier contamination on integrated MOSFETs in the context of energy-harvesting devices. We confirmed that the close integration of MOSFET circuits in a photovoltaic cell causes malfunctioning under strong light illumination. Moreover, numerical simulations revealed that PMOS is highly sensitive to carrier contamination as a forward pn-junction from the bulk-side storage carriers into the NWell region. Furthermore, increasing the distance from the illumination window was not an effective countermeasure, and alternative methods, such as the silicon-on-insulator substrate, n−-substrate, or NMOS logic, should be implemented for such large-scale integration.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10536006","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141150325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Machine Learning-Based Modeling of Hot Carrier Injection in 40 nm CMOS Transistors 基于机器学习的 40 纳米 CMOS 晶体管热载流子注入建模
IF 2.3 3区 工程技术
IEEE Journal of the Electron Devices Society Pub Date : 2024-03-21 DOI: 10.1109/JEDS.2024.3380572
Xhesila Xhafa;Ali Doğuş Güngördü;Mustafa Berke Yelten
{"title":"Machine Learning-Based Modeling of Hot Carrier Injection in 40 nm CMOS Transistors","authors":"Xhesila Xhafa;Ali Doğuş Güngördü;Mustafa Berke Yelten","doi":"10.1109/JEDS.2024.3380572","DOIUrl":"10.1109/JEDS.2024.3380572","url":null,"abstract":"This paper presents a machine-learning-based approach for the degradation modeling of hot carrier injection in metal-oxide-semiconductor field-effect transistors (MOSFETs). Stress measurement data have been employed at various stress conditions of both n- and p-MOSFETs with different channel geometries. Gaussian process regression algorithm is preferred to model the post-stress characteristics of the drain-source current, the threshold voltage, and the drain-source conductance. The model outcomes have been compared with the actual measurements, and the accuracy of the generated models has been demonstrated across the test data by providing the appropriate statistics metrics. Finally, case studies of degradation estimation have been considered involving the usage of machine-learning-based models on transistors with different channel geometries or subjected to distinct stress conditions. The outcomes of this analysis reveal that the established models yield high accuracy in such contexts.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10477498","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140197150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models 离子通道和共植入物对硅中离子范围和损伤的影响：利用 PL、SRP、SIMS 和 MC 模型进行的研究
IF 2.3 3区 工程技术
IEEE Journal of the Electron Devices Society Pub Date : 2024-03-19 DOI: 10.1109/JEDS.2024.3379328
Michael I. Current;Takuya Sakaguchi;Yoji Kawasaki;Viktor Samu;Anita Pongracz;Luca Sinko;Árpád Kerekes;Zsolt Durkó
{"title":"Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models","authors":"Michael I. Current;Takuya Sakaguchi;Yoji Kawasaki;Viktor Samu;Anita Pongracz;Luca Sinko;Árpád Kerekes;Zsolt Durkó","doi":"10.1109/JEDS.2024.3379328","DOIUrl":"10.1109/JEDS.2024.3379328","url":null,"abstract":"This study uses photoluminescence (PL) and other carrier-recombination sensitive probes in combination with spreading resistance profiling (SRP), SIMS and IMSIL MC-calculations to monitor the ion range and damage levels in highly-channeled and random beam orientation 7.5 MeV B and 10 MeV P and As profiles and various combinations of co-implants with 50 keV Phosphorus implants in Silicon(100). The effects of annealing on the 10 MeV profiles showed the strong shifts in PL data from implant damage in the as-implanted and annealed samples. Curious “intermittencies” were seen in the PL signals from MeV implant defect centers.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10475707","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140171963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Conductivity Enhancement of PVD-WS2 Films Using Cl2-Plasma Treatment Followed by Sulfur-Vapor Annealing 利用 Cl2 等离子处理和硫气退火增强 PVD-WS2 薄膜的导电性
IF 2.3 3区 工程技术
IEEE Journal of the Electron Devices Society Pub Date : 2024-03-18 DOI: 10.1109/JEDS.2024.3378745
Keita Kurohara;Shinya Imai;Takuya Hamada;Tetsuya Tatsumi;Shigetaka Tomiya;Kuniyuki Kakushima;Kazuo Tsutsui;Hitoshi Wakabayashi
{"title":"Conductivity Enhancement of PVD-WS2 Films Using Cl2-Plasma Treatment Followed by Sulfur-Vapor Annealing","authors":"Keita Kurohara;Shinya Imai;Takuya Hamada;Tetsuya Tatsumi;Shigetaka Tomiya;Kuniyuki Kakushima;Kazuo Tsutsui;Hitoshi Wakabayashi","doi":"10.1109/JEDS.2024.3378745","DOIUrl":"10.1109/JEDS.2024.3378745","url":null,"abstract":"The conductivity of tungsten disulfide (WS2) films using sputtering, which is a physical vapor deposition (PVD), was enhanced using a chlorine (Cl2)-plasma treatment and sulfur-vapor annealing (SVA). For WS2 films to be used in thermoelectric devices, its carrier concentration must be controlled. Therefore, we exposed WS2 films to Cl2-plasma as a doping method. In addition, SVA was performed to improve the crystallinity of the film and potentially introduce activating dopants. Consequently, the conductivity of the Cl2-plasma-treated PVD-WS2 films (0.440 S/m) more than doubled compared with that of an untreated PVD-WS2 film (0.201 S/m). The doping type in this experiment is considered to be n-type on the basis of a positive peak shift observed in the X-ray photoelectron spectra.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10475166","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140171957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fermi-Level Splitting-Induced Light-Intensity-Dependent Recombination in Fully Ultra-Wide Bandgap Deep-Ultraviolet Photodetector 全超宽带隙深紫外光探测器中的费米级分裂诱导光强相关性重组
IF 2.3 3区 工程技术
IEEE Journal of the Electron Devices Society Pub Date : 2024-03-18 DOI: 10.1109/JEDS.2024.3373905
Wanyu Ma;Maolin Zhang;Lei Wang;Shan Li;Lili Yang;Zeng Liu;Yufeng Guo;Weihua Tang
{"title":"Fermi-Level Splitting-Induced Light-Intensity-Dependent Recombination in Fully Ultra-Wide Bandgap Deep-Ultraviolet Photodetector","authors":"Wanyu Ma;Maolin Zhang;Lei Wang;Shan Li;Lili Yang;Zeng Liu;Yufeng Guo;Weihua Tang","doi":"10.1109/JEDS.2024.3373905","DOIUrl":"10.1109/JEDS.2024.3373905","url":null,"abstract":"Ga2O3-based heterojunction features the capability of self-driven detection, which is reckoned as a promising candidate for the next-generation deep-ultraviolet (DUV) sensing scenarios. Heterojunction consisting of fully ultra-wide bandgap (UWB) semiconductors would prevent additional response in the near-ultraviolet band. In this work, a \u0000<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>\u0000-Ga2O3/AlN heterojunction photodetector is constructed and its operating mechanisms are investigated. By measuring its static current-voltage (I-V) and dynamic current-time (I-t) characteristics, the detection performance, including a photo-to-dark current ratio of \u0000<inline-formula> <tex-math>$8.6times 10,,^{mathrm{ 5}}$ </tex-math></inline-formula>\u0000, a responsivity of 0.41 mA/W, a specific detectivity of \u0000<inline-formula> <tex-math>$3.4times 10,,^{mathrm{ 12}}$ </tex-math></inline-formula>\u0000 Jones, and an external quantum efficiency of 0.2% were achieved under 0 V bias, indicating that the proposed device realized high-performance self-driven detection. Moreover, this work demonstrated the impact of Fermi-level splitting introduced by the enhanced photo illumination on the carrier recombination and the sensing performance. With the increase of light intensity, Fermi levels are separated and available recombination centers are increased, leading to the enhancement of the recombination process and the variation of detection properties. Consequently, this work highlights the potential of the fully UWB heterojunction and provides further optimization guidelines.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10472323","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140171714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs BSIM-CMG 与非晶 InZnO TFT 亚阈值和线性区低频噪声模拟的兼容性
IF 2.3 3区 工程技术
IEEE Journal of the Electron Devices Society Pub Date : 2024-03-14 DOI: 10.1109/JEDS.2024.3375867
Yayi Chen;Xingji Liu;Dengyun Lei;Yuan Liu;Rongsheng Chen;Yao Ni;Hoi-Sing Kwok;Wei Zhong
{"title":"Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs","authors":"Yayi Chen;Xingji Liu;Dengyun Lei;Yuan Liu;Rongsheng Chen;Yao Ni;Hoi-Sing Kwok;Wei Zhong","doi":"10.1109/JEDS.2024.3375867","DOIUrl":"10.1109/JEDS.2024.3375867","url":null,"abstract":"The compatibility of the advanced BSIM-CMG to the low frequency noise (LFN) simulation in amorphous IZO TFTs is evaluated over subthreshold and linear regions. Two kinds of devices with SiO2-SiNx and Al2O3 gate insulators are studied. In these devices, the 1/f noise is confirmed as the main component of LFN. Then the dominated origin of the 1/f noise is explained by the \u0000<inline-formula> <tex-math>$Delta text{N}$ </tex-math></inline-formula>\u0000 model in devices with SiO2-SiNx layers, and by the \u0000<inline-formula> <tex-math>$Delta text{N}$ </tex-math></inline-formula>\u0000-\u0000<inline-formula> <tex-math>$Delta mu $ </tex-math></inline-formula>\u0000 model in devices with Al2O3 layers, respectively. Based on these models, the interficial traps density and the Hooge’s parameters are further calculated, and then applied to the extraction of noise parameters (NOIAeff, NOIB and NOIC) in BSIM-CMG. Compared to the measured data, the simulated results indicate that the noise can be well simulated by the improved BSIM-CMG both in the subthreshold and linear regions of IZO TFTs. It provides a comprehensive evaluation on the suitability of the BSIM-CMG for 1/f noise modelling in amorphous metal oxide TFTs.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10466727","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140147154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Online Monitoring Method for Bond Wire Fatigue in IGBT Module IGBT 模块中键合线疲劳的在线监测方法
IF 2.3 3区 工程技术
IEEE Journal of the Electron Devices Society Pub Date : 2024-03-10 DOI: 10.1109/JEDS.2024.3399554
Hongtao Liu;Fei Wang;Xiaokang Zhang;Weiyi Xia;Lintao Ren
{"title":"An Online Monitoring Method for Bond Wire Fatigue in IGBT Module","authors":"Hongtao Liu;Fei Wang;Xiaokang Zhang;Weiyi Xia;Lintao Ren","doi":"10.1109/JEDS.2024.3399554","DOIUrl":"10.1109/JEDS.2024.3399554","url":null,"abstract":"IGBT modules are core components of power electronic converters, and their reliability has gained significant attention. Among various reliability concerns, bond wire fatigue is a prominent issue. Bond wire fatigue can alter the electrical characteristics of IGBT modules, affecting the turn-off process of the IGBT. Consequently, it leads to changes in the collector-emitter voltage spike and the auxiliary emitter-emitter voltage spike during the turn-off process. The paper proposes the utilization of the K factor parameter which is not affected by the collector current and junction temperature, based on the collector-emitter voltage spike and the auxiliary emitter-emitter voltage spike, for bond wire fatigue monitoring of IGBT modules. Additionally, the monitoring of bond wire fatigue and junction temperature of IGBT modules was achieved based on the K factor parameter and the auxiliary emitter-emitter voltage spike. This provides a basis for the reliability assessment of IGBT modules.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10529136","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140928941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Program Start Bias Grouping to Compensate for the Geometric Property of a String in 3-D NAND Flash Memory 通过程序启动偏置分组补偿 3-D NAND 闪存中字符串的几何特性
IF 2.3 3区 工程技术
IEEE Journal of the Electron Devices Society Pub Date : 2024-03-08 DOI: 10.1109/JEDS.2024.3372971
Sungju Kim;Sangmin Ahn;Sechun Park;Jongwoo Kim;Hyungcheol Shin
{"title":"Program Start Bias Grouping to Compensate for the Geometric Property of a String in 3-D NAND Flash Memory","authors":"Sungju Kim;Sangmin Ahn;Sechun Park;Jongwoo Kim;Hyungcheol Shin","doi":"10.1109/JEDS.2024.3372971","DOIUrl":"10.1109/JEDS.2024.3372971","url":null,"abstract":"The string (STR) with various geometrical profiles in 3-D NAND flash cause the degradation of program efficiency. This is because the program speed differences among WL layers within the STR are caused by the geometrical properties observed through measurement results. In this work, we propose the method to reduce the program speed differences based on a word-line (WL) grouping in terms of threshold voltage (Vth) distribution to compensate for the program start voltage (Vstart). To address various geometrical profiles, we consider a flexible compensation method through \u0000<inline-formula> <tex-math>$Delta $ </tex-math></inline-formula>\u0000Peak_Vth, i.e., the net amount of movement from the erase to the program state. \u0000<inline-formula> <tex-math>$Delta $ </tex-math></inline-formula>\u0000Peak_Vth according to WL layers clearly distinguished the geometrical properties among WL layers, and through this, the linearity of \u0000<inline-formula> <tex-math>$Delta $ </tex-math></inline-formula>\u0000Peak_Vth is frequently observed for specific WL layer intervals with taper profile. Utilizing this linearity, we conducted the WL grouping and successfully demonstrated \u0000<inline-formula> <tex-math>$text{V}_{mathrm{ start}}$ </tex-math></inline-formula>\u0000 compensation by applying the proposed method to each WL group through the measurement of a commercial 3-D NAND package. Moreover, the reduced WL grouping method is also contrived to relax circuit design complications and evaluated the usefulness of the proposed method.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10459337","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140074155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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