Oxide Phototransistor Array With Multiply-and-Accumulation Functions for In-Sensor Image Processing

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-02-25 DOI:10.1109/JEDS.2025.3545885

Saisai Wang;Xiaotao Jing;Wanlin Zhang;Rui Wang;Hong Wang;Qi Huang

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引用次数: 0

Abstract

Advanced in-sensor computing paradigm has gradually become a research hotspot in this IOT era of sensor data proliferation. However, most existing in-sensor computing devices are plagued by a complex structure, and the uniformity of the sensor array is difficult to ensure. Moreover, photoconductive devices are incapable of achieving on-chip current summation because the regulation of photoresponsivity usually leads to inconsistent dark current, thereby impeding the practical implementation of artificial neural networks (ANNs) on the sensor array. In this work, we developed a

$3\times 3$

ultraviolet (UV) image sensor array based on solution-processed indium oxide (In2O3) phototransistors. The devices exhibit tunable responsivity and unified dark current under negative gate voltage (Vgs), enabling the direct execution of multiply-and-accumulation (MAC) operations. Consequently, two key applications of ANN were successfully demonstrated: image convolution and classification.

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用于传感器内图像处理的具有乘法和累加函数的氧化物光电晶体管阵列

在这个传感器数据激增的物联网时代，先进的传感器内计算范式逐渐成为研究热点。然而，现有的传感器内计算设备大多结构复杂，且传感器阵列的均匀性难以保证。此外，光导器件无法实现片上电流求和，因为光响应性的调节通常会导致暗电流不一致，从而阻碍了人工神经网络（ann）在传感器阵列上的实际实现。在这项工作中，我们开发了一种基于溶液处理氧化铟（In2O3）光电晶体管的$3\ × 3$紫外（UV）图像传感器阵列。该器件在负栅极电压（Vgs）下具有可调谐的响应性和统一的暗电流，可直接执行乘法累加（MAC）操作。因此，成功地演示了人工神经网络的两个关键应用：图像卷积和分类。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.